Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Daniel Haasmann"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles.
Externí odkaz:
https://doaj.org/article/629a509c88804c1f9ab7334a4b2ee696
Autor:
Arnar M. Vidarsson, Axel R. Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Ö. Sveinbjörnsson
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111121-111121-7 (2023)
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the
Externí odkaz:
https://doaj.org/article/47769d9eaac04af9925d4bf883195c57
Autor:
Vikas Joshi, Utkarsh Jadli, Peyush Pande, Mayank Chaturvedi, Daniel Haasmann, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 11, Pp 116472-116479 (2023)
We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the rat
Externí odkaz:
https://doaj.org/article/922b249390d44e80a997aa2c9771a9b7
Publikováno v:
AIP Advances, Vol 13, Iss 5, Pp 055126-055126-6 (2023)
Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conduct
Externí odkaz:
https://doaj.org/article/d506495a46fc4126b2140416c3c1a335
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mo
Externí odkaz:
https://doaj.org/article/8f3596bb4fd0489cbccbdb69c4d98611
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://doaj.org/article/575851fd107e46e3b9de43ad46e4914a
Publikováno v:
Energies, Vol 16, Iss 4, p 1771 (2023)
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifica
Externí odkaz:
https://doaj.org/article/02c9197adaef49ec9e157a3dea1e3e26
Autor:
Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 468-474 (2018)
This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an
Externí odkaz:
https://doaj.org/article/16ee35701d25404fbc2ac6a017c61f6c
Publikováno v:
Materials Science Forum. 1090:101-105
The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed gate oxides is still far below the theoretical limit. It has been suggested that the main reason is high density of very fast interface traps, labeled NI, located
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::326046068ad802c2aa554957cd5f8b1a
https://doi.org/10.4028/p-9v5b6v
https://doi.org/10.4028/p-9v5b6v
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Transactions on Electron Devices. 69:6225-6230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ffcadb3e68b24a3610c28238f9bb2e
https://doi.org/10.1109/ted.2022.3206184
https://doi.org/10.1109/ted.2022.3206184