Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Daniel H. Malueg"'
Publikováno v:
SPIE Proceedings.
The CNTech Advanced Lithography Toolset uses a beam propagation method to calculate the intensity profile as it propagates through the mask and into the photoresist. One can construct the membrane, absorber, gap, and resist, each as a series of n-sli
Autor:
Michael J. Trybendis, K. Myers, Yuansheng Ma, M. Yu, Q. Leonard, Henry I. Smith, James Taylor, Brent Boerger, Daniel H. Malueg, E. Moon, J. Wallace, Scott Dhuey, Francesco Cerrina, R. Selzer
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2896
We show the first results from a newly-operation advanced x-ray stepper, and describe an improved type of x-ray mask for use on it. The Mod 5C is the newest x-ray stepper developed by JMAR (JSAL Nanolithography). It is configured for installation at
Publikováno v:
Japanese Journal of Applied Physics. 43:3722
This paper presents a powerful modeling approach to the X-ray exposure operating space of a silicon nitride clear phase-shifter mask to produce sub-50 nm features. By first developing a central composite experimental design, we then used a wavefront
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3575
Phase-shifting masks are widely used in optical lithography, and the question is whether the technology can be extended to much shorter wavelengths. We have extensively modeled the use of clear phase-mask materials as absorbers for x-ray exposures. S
Publikováno v:
Inorganic Chemistry. 20:3540-3543