Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Daniel Gorka"'
Publikováno v:
ECS Transactions. 41:295-299
AlGaN/GaN HEMTs are of interest for high power and high frequency device applications due to their superior material properties. MOCVD growth of GaN HEMTs shows great promise for scale-up volume production with high fabrication yield and subsequently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2147dac2955d01546d383c3b41e07eb
https://doi.org/10.1149/1.3631506
https://doi.org/10.1149/1.3631506
Autor:
Lin Zhou, Paul Saunier, Shiping Guo, Xiang Gao, Daniel Gorka, David J. Smith, Andrew Ketterson
Publikováno v:
physica status solidi c. 8:2081-2085
High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de67f9245c4b502fddd7de67d844a24d
https://doi.org/10.1002/pssc.201001069
https://doi.org/10.1002/pssc.201001069
Autor:
Daniel Gorka, Paul Saunier, Ming Pan, Mark Oliver, Andrew Ketterson, Michael L. Schuette, Xiang Gao
Publikováno v:
physica status solidi c. 11:495-497
We report transport properties measured from quaternary barrier InAlGaN high electron mobility transistor wafers on SiC substrates. With similar barrier thicknesses, higher mobility and sheet charge density were both demonstrated by a strained barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b282f3a2e4e6c91eaf7132dda8d4b2f9
https://doi.org/10.1002/pssc.201300669
https://doi.org/10.1002/pssc.201300669
Autor:
H. E. Smith, Virginia Miller, Tomas Palacios, David H. Tomich, Antonio Crespo, Mark Bellot, Glen D. Via, Shiping Guo, M. Trejo, Xiang Gao, Kelson D. Chabak, James K. Gillespie, Han Wang, Daniel Gorka, M. Kossler, Jinwoork W. Chung
Publikováno v:
physica status solidi (a). 207:1348-1352
In this work we present the epitaxial and device results of AIInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AIInN/GaN HEMT structures with sub-10nm AlInN barrier were grown with very low Ga background level (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86285e84317f5036f917d0d932f33e5c
https://doi.org/10.1002/pssa.200983621
https://doi.org/10.1002/pssa.200983621