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pro vyhledávání: '"Daniel Flatoff"'
Enhanced Sample Preparation of Cu Low-k Semiconductors via Mechanical Polishing and Ion Beam Etching
Autor:
Daniel Flatoff, Shane Roberts
Publikováno v:
Microscopy Today. 12:41-43
Modern microelectronics have rapidly decreased in geometry to enhance the speed and processing power of computers. Advanced devices are approaching design rules of sub 0.13 micron in size, and the trend continues at the rate dictated by Moore's Law,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70198c1e8027a330041e5dadfbf3200f
https://doi.org/10.1017/s1551929500051828
https://doi.org/10.1017/s1551929500051828
Autor:
Esther Chen, Jeremy D. Russell, Daniel Flatoff, Nicolas LaManque, Bianzhu Fu, Wayne Zhao, Stephen Mongeon
Publikováno v:
Microscopy and Microanalysis. 20:362-363
Introductions of 3-Dimentional FinFET transistors in semiconductor device open a new era for continuous shrinkage of semiconductor transistor nodes. One big challenge for physical failure analysis (PFA) and transmission electron microscopy (TEM) is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345f009a915895eca10ad10233cb37c6
https://doi.org/10.1017/s1431927614003535
https://doi.org/10.1017/s1431927614003535
Publikováno v:
Microscopy and Microanalysis. 9:810-811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f04c9b8e3b9ab77fd53d1e92f143df
https://doi.org/10.1017/s143192760344405x
https://doi.org/10.1017/s143192760344405x