Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Daniel F. Downey"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:365-371
Advances in reducing the sizes of device structures and line widths place increasing demands on the accuracy of dopant placement and the control of dopant motion during activation anneals. Serial process high current ion implantation systems seek to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152290a745b6f38bd7e7a9210e354afd
https://doi.org/10.1016/j.nimb.2005.05.037
https://doi.org/10.1016/j.nimb.2005.05.037
Publikováno v:
Microelectronics Journal. 36:522-526
Characterization of the inactive clusters formed by high dose implantation silicon are one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7741f0f6f91cfb3551cdeffba2d06a4b
https://doi.org/10.1016/j.mejo.2005.02.095
https://doi.org/10.1016/j.mejo.2005.02.095
Autor:
Daniel F. Downey, Edwin A. Arevalo, Wolfgang Skorupa, Rossen Yankov, Matthias Voelskow, Thoralf Gebel, Wolfgang Anwand
Publikováno v:
Materials Science and Engineering: B. :358-361
The capabilities of plasma doping (PLAD) and flash lamp annealing (FLA) for use in ultra-shallow junction (USJ) fabrication have been evaluated. Silicon wafers have been doped in a BF 3 plasma using wafer biases ranging from 0.6 to 1 kV and a dose of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eeaf288583f3c7bc32e6bb688c0c18e
https://doi.org/10.1016/j.mseb.2004.07.063
https://doi.org/10.1016/j.mseb.2004.07.063
Publikováno v:
Journal of Applied Physics. 93:2449-2452
The defect evolution upon annealing of low energy, amorphizing germanium implants into silicon was studied using plan-view transmission electron microscopy. Implants with energies of 5–30 keV at an amorphizing dose of 1×1015 Ge+ cm−2 were anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf102a79a7d6176d02adab334e2c737
https://doi.org/10.1063/1.1542936
https://doi.org/10.1063/1.1542936
Publikováno v:
Journal of Electronic Materials. 28:1340-1344
The effects of “fast” ramp-rates (up to 425°C/s) and spike anneals are investigated for 0.25 keV, 0.5 keV, and 1.0 keV 11B+ and for 1.1 and 2.2 keV BF2 at a dose of 1e 15/cm2. Below an implant energy threshold where no extended defects form, fas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e2df43b9ca7560bf3ee2f461533679
https://doi.org/10.1007/s11664-999-0119-6
https://doi.org/10.1007/s11664-999-0119-6
Autor:
Steven D. Marcus, Daniel F. Downey, Wilfried Lerch, M. Glück, N. A. Stolwijk, H. Walk, Judy W. Chow, M. Schäffer
Publikováno v:
Journal of The Electrochemical Society. 146:2670-2678
For the formation of ultrashallow junctions, a controlled gaseous ambient during rapid thermal annealing is indispensible. To understand the diffusion/activation mechanism, the influencing and depending variables have to be clarified precisely. Ion i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99014c5cac930bb4bb4f6a2fe82eb628
https://doi.org/10.1149/1.1391990
https://doi.org/10.1149/1.1391990
Publikováno v:
Journal of Electronic Materials. 27:1291-1295
Ion implants of 2.0 and 5.0 keV 11B+ and 2.2, 5.0, and 8.9 keV 49BF2+ at a dose of 1E15/cm2 were investigated. Anneal conditions were developed which produced highly activated yet shallow junctions. The effects of oxygen were studied previously by us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198d8ccc8681304f4877fa1496152507
https://doi.org/10.1007/s11664-998-0088-1
https://doi.org/10.1007/s11664-998-0088-1
Publikováno v:
Journal of Electronic Materials. 27:1296-1314
The effects of time, temperature, ramp-up, and ramp-down rates with rapid thermal annealing employing a STEAG AST SHS3000 were investigated on 1.0 and 2.0 keV 11B+, 2.2, 5.0, and 8.9 keV 49BF 2 + , and 2 KeV 75As+, 1E15/cm2 samples implanted in a Var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a286724fa14c06742bb8c02d56d6004e
https://doi.org/10.1007/s11664-998-0089-0
https://doi.org/10.1007/s11664-998-0089-0
Publikováno v:
Thin Solid Films. :562-569
11B+ and 49BF2+ implants on a Varian VIISion-80 PLUS Ion Implanter from 2.0 to 8.9 keV at a dose of 1E15/cm2, and at various controlled and measured (in situ) peak beam-current densities, ranging from 3 to 600 μA/cm2, were investigated to study the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e8b255e3da39f25c04815785f4be47
https://doi.org/10.1016/s0040-6090(97)00494-x
https://doi.org/10.1016/s0040-6090(97)00494-x
Autor:
Daniel F. Downey, G.C. Angel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:68-74
As+, 80 keV implants at specification beam currents were conducted on both the Varian E1000 and E220/E500 implanters to study metals contamination. The E1000 was configured with a silicon coated disc and spill-over cup and a newly designed low partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff2916a3c55ef7a4c2203c00b05e8ef
https://doi.org/10.1016/0168-583x(94)00456-0
https://doi.org/10.1016/0168-583x(94)00456-0