Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Daniel E. Field"'
Autor:
Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035306-035306-5 (2020)
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using m
Externí odkaz:
https://doaj.org/article/8fedbae859214ba68c92f35c0dcab39c
Autor:
Mohamadali Malakoutian, Daniel E. Field, Nicholas J. Hines, Shubhra Pasayat, Samuel Graham, Martin Kuball, Srabanti Chowdhury
Publikováno v:
ACS Applied Materials & Interfaces. 13:60553-60560
The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essentia
Autor:
Rachel A. Oliver, Oliver A. Williams, James W Pomeroy, Daniel E. Field, Matthew D. Smith, Jerome A. Cuenca, Iain G. Thayne, Martin Kuball, Fabien Massabuau, Simon M. Fairclough
Publikováno v:
ACS Applied Materials & Interfaces. 12:54138-54145
Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of high-power high-frequency radio frequency amplifiers. Conventionally, an amorphous interlaye
Autor:
David J. Wallis, Rachel A. Oliver, Oliver A. Williams, Daniel E. Field, Soumen Mandal, James W Pomeroy, Martin Kuball, Matthew D. Smith, Fabien Massabuau, Iain G. Thayne, Jerome A. Cuenca
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::296081e9841f22c8fa37d2cdd863ce2f
https://orca.cardiff.ac.uk/id/eprint/136722/8/1-s2.0-S0008622320311465-main.pdf
https://orca.cardiff.ac.uk/id/eprint/136722/8/1-s2.0-S0008622320311465-main.pdf
Autor:
Daniel E. Field, James W. Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter M. Gammon, Vishal A. Shah, Martin Kuball
Publikováno v:
Applied Physics Letters. 120:113503
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations
Autor:
Daniel J. Twitchen, Ryan Beale, Daniel E. Field, Alexander J. Leide, Dong Liu, James W Pomeroy, Martin Kuball, Naomi Getzler, Daniel Francis, Firooz Faili
Publikováno v:
Scripta Materialia. 209:114370
An improved analysis of the interfacial toughness using nanoindentation induced blistering of thin films on stiff substrates is demonstrated on GaN-on-diamond. The Hutchinson-Suo analysis requires accurate measurement of blister dimensions, conventio
Autor:
Edmund J. W. Smith, James W Pomeroy, William M. Waller, Daniel E. Field, Paul W May, Martin Kuball
Publikováno v:
May, P W, Waller, W M, Pomeroy, J W, Field, D E, Smith, E & Kuball, M H H 2020, ' Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond ', Semiconductor Science and Technology, vol. 35, 095021 . https://doi.org/10.1088/1361-6641/ab9d35
Carbide forming interlayers, such as amorphous silicon nitride, are typically used for GaN-on-diamond heterogenous integration. This interlayer has a low thermal conductivity, introducing an additional extrinsic interfacial thermal resistance. It may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::139d65cb13f266ed8c7b79d601f24c70
https://research-information.bris.ac.uk/en/publications/5226e1d7-9463-4588-a3f2-77224a5a2b64
https://research-information.bris.ac.uk/en/publications/5226e1d7-9463-4588-a3f2-77224a5a2b64