Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Daniel Domes"'
Publikováno v:
Materials Science Forum. 858:817-820
In switching applications with half-bridge like configurations the load current is commutated to the so-called reverse or body-diode of a switching device once each switching cycle. The bipolar charge generated in the switch in principle leads to a r
Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effec
Publikováno v:
Microelectronics Reliability. 52:509-518
Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available on the market
Publikováno v:
Materials Science Forum. :587-590
A 1200 V SiC JFET has been demonstrated to achieve ultra-low switching losses ten times lower than for industrial grade 1200V Si IGBT. The low switching losses are also shown to compete with the fastest 600V class MOSFET in the market, yielding 1.1%
Publikováno v:
Materials Science Forum. :1167-1170
Starting with the production of Infineon´s first silicon carbide (SiC) Schottky diodes in 2001, a lot of progress was achieved during recent years. Currently, a 3rd generation of MPS (merged pn Schottky) diodes is commercially available combining tr
Autor:
Franz-J. Niedernostheide, Christian Jaeger, Stefan Hain, Mark-M. Bakran, Daniel Heer, Daniel Domes
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky d
Autor:
Thomas Gutt, Volodymyr Komarnitskyy, Carsten Schaeffer, Daniel Domes, Dorothea Werber, Frank Pfirsch, Thomas Hunger
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A reverse conducting IGBT in trench technology is presented. By this approach no carrier life time means are necessary to balance static and dynamic losses of the diode. The diode's p-emitter efficiency can be dynamically tailored by the applied gate
Publikováno v:
2006 37th IEEE Power Electronics Specialists Conference.
The paper proposes a new and universal gate drive concept for SiC JFETs taking into account the special demands of these normally-on devices. Particularly with regard to voltage source inverter or matrix converter topologies there is the static need