Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Daniel Distaso"'
Autor:
F. Lallement, J.-P Reynard, Damien Lenoble, J. Weeman, D Downey, Ludovic Godet, Timothy J. Miller, Z. Fang, A Arevalo, Daniel Distaso, Bon-Woong Koo, Jay T. Scheuer, A. Grouillet
Publikováno v:
Surface and Coatings Technology. 186:57-61
Plasma doping promises superior doping profiles and high productivity relative to traditional beamline ion implantation for future semiconductor device nodes. We present data showing ultra-shallow junction formation using VSEA's Pulsed PLAsma Doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e2273def0aa50ba8d764716254a493
https://doi.org/10.1016/j.surfcoat.2004.04.011
https://doi.org/10.1016/j.surfcoat.2004.04.011
Autor:
T. Rockwell, Shan Tang, Chris Campbell, Harold Persing, Daniel Distaso, S. Salimian, K. Han, Ludovic Godet
Publikováno v:
AIP Conference Proceedings.
Process characterization of a novel plasma based conformai doping technique was conducted for arsenic dopant in terms of silicon amorphization, fin integrity, doping conformality, sheet resistance and main effect of doping process parameters. Doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141644b6d3f4b27f25dac79ad83c07a2
https://doi.org/10.1063/1.4766523
https://doi.org/10.1063/1.4766523
Publikováno v:
AIP Conference Proceedings.
Decreased energy of halo implants with tighter requirements on beam angle control have driven many lower dose (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45462c8f950766a4c0c9b1d640bde032
https://doi.org/10.1063/1.2401542
https://doi.org/10.1063/1.2401542
Publikováno v:
AIP Conference Proceedings.
As production CMOS devices shrink to 90nm and below, the requirements for high quality ion beams increase in medium and high current implant systems. Critical variations in device performance can be related to changes in ion beam properties, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58d0211583b8873865e9059872d617b
https://doi.org/10.1063/1.2401574
https://doi.org/10.1063/1.2401574
Autor:
A. Grouillet, Ludovic Godet, B. Duriez, B. Tavel, Jay T. Scheuer, F. Lallement, J. Weeman, Damien Lenoble, Francois Wacquant, M. Woo, P. Stolk, Daniel Distaso, Franck Arnaud, Y. Erokhin
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
N-type and p-type Plasma Doping (PLAD) process have been developed for fabricating the ultra-shallow junctions (USJ) needed for the 65nm CMOS technology. For the first time, the strong benefit of PLAD compared to ultra-low energy implantations for fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8739b0d60825a71d5d23dab0256c98
https://doi.org/10.1109/vlsit.2004.1345465
https://doi.org/10.1109/vlsit.2004.1345465
Autor:
D.L. Smatlak, Rosario Mollica, Anthony Renau, Antonella Cucchetti, J.C. Olson, Daniel Distaso, Jay T. Scheuer
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
An innovative beam tuning algorithm has been developed for the VIISta 810 200/300 mm medium current implanter resulting in decreased tuning times and increased wafer throughput. Pre-calibrated magnets and a recipe-configurable tuning sequence are at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9acca1a1e60f49f9f6561af9f08cae9
https://doi.org/10.1109/iit.2000.924185
https://doi.org/10.1109/iit.2000.924185