Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Daniel C. Messina"'
Autor:
Jung Han, Kai Fu, Andrew M. Armstrong, Hong Chen, Chen Yang, Andrew A. Allerman, Hanxiao Liu, Xuguang Deng, Shanthan Reddy Alugubelli, Tae Hyeon Kim, Houqiang Fu, Fernando Ponce, Prudhvi Peri, David J. Smith, Edward T. Yu, Po Yi Su, Daniel C. Messina, Jingan Zhou, Chi-Yin Cheng, Xuanqi Huang, Robert J. Nemanich, Stephen M. Goodnick, Dinusha Herath Mudiyanselage, Kevin Hatch, Yuji Zhao, Tsung-Han Yang, Bingjun Li, Reza Vatan Meidanshahi
Publikováno v:
Materials Today. 49:296-323
This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize randomly placed, reliable, contactable, and generally useable laterally pat
Autor:
Daniel C. Messina, Kevin A. Hatch, Saurabh Vishwakarma, David J. Smith, Yuji Zhao, Robert J. Nemanich
Publikováno v:
Journal of Vacuum Science & Technology A. 41:022603
Two atomic layer etching (ALE) methods were studied for crystalline GaN, based on oxidation, fluorination, and ligand exchange. Etching was performed on unintentionally doped GaN grown by hydride vapor phase epitaxy. For the first step, the GaN surfa
Publikováno v:
Journal of Applied Physics. 131
Electronic states at GaN surfaces and at regrowth and heteroepitaxy interfaces inhibit electronic device performance. Understanding electronic state configuration at the GaN surface is, therefore, crucial for the development of GaN-based devices, whi
Autor:
Kevin Hatch, David J. Smith, Yuji Zhao, Robert J. Nemanich, Daniel C. Messina, Prudhvi Peri, Kai Fu
Publikováno v:
Microscopy and Microanalysis. 26:840-842
Autor:
Franz A. M. Koeck, Paul A. Scowen, Brianna S. Eller, Robert J. Nemanich, Zhiyu Huang, Daniel C. Messina
Publikováno v:
Journal of Vacuum Science & Technology A. 39:042402
Ultraviolet optical coatings employ wide bandgap dielectric materials due to their characteristic low absorption. High-reflectivity and antireflective coatings are essential for optical devices, which can be achieved by alternately depositing two die
Autor:
Chi-Yin Cheng, Kai Fu, Reza Vatan Meidanshahi, Xuguang Deng, Xin Qi, Robert J. Nemanich, Fernando Ponce, Chen Yang, Po Yi Su, David J. Smith, Stephen M. Goodnick, Yuji Zhao, Daniel C. Messina, Hanxiao Liu, Tsung-Han Yang, Prudhvi Peri, Jossue Montes, Houqiang Fu, Kevin Hatch, Jingan Zhou
Publikováno v:
Applied Physics Letters. 118:222104
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si)