Zobrazeno 1 - 10
of 381
pro vyhledávání: '"Daniel C Ralph"'
Autor:
Yahong Chai, Yuhan Liang, Cancheng Xiao, Yue Wang, Bo Li, Dingsong Jiang, Pratap Pal, Yongjian Tang, Hetian Chen, Yuejie Zhang, Hao Bai, Teng Xu, Wanjun Jiang, Witold Skowroński, Qinghua Zhang, Lin Gu, Jing Ma, Pu Yu, Jianshi Tang, Yuan-Hua Lin, Di Yi, Daniel C. Ralph, Chang-Beom Eom, Huaqiang Wu, Tianxiang Nan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient
Externí odkaz:
https://doaj.org/article/45a1f6dbac21417da9eaaf0082182701
Autor:
Ruofan Li, Lauren J. Riddiford, Yahong Chai, Minyi Dai, Hai Zhong, Bo Li, Peng Li, Di Yi, Yuejie Zhang, David A. Broadway, Adrien E. E. Dubois, Patrick Maletinsky, Jiamian Hu, Yuri Suzuki, Daniel C. Ralph, Tianxiang Nan
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl0.5Fe1.5O4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magn
Externí odkaz:
https://doaj.org/article/fdf9e28ba73e459c82349c125b29fb93
Autor:
Lijun Zhu, Daniel C. Ralph
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
There has been a lot of interest in using antiferromagnets for magnetic memories, due to their fast dynamics, and resilience to stray fields. Such a memory was supposed to be switched by a spin-orbit torque. Here, Zhu and Ralph find that as a ferrima
Externí odkaz:
https://doaj.org/article/b3d2815a18894108a9aa3ac8643f7d2b
Akademický článek
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Publikováno v:
APL Materials, Vol 9, Iss 12, Pp 120401-120401-3 (2021)
Externí odkaz:
https://doaj.org/article/aedb2692955d48769e2d6ad54f237c73
Autor:
Olalekan Afuye, Xiang Li, Felicia Guo, Debdeep Jena, Daniel C. Ralph, Alyosha Molnar, Huili Grace Xing, Alyssa Apsel
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 197-205 (2019)
This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic
Externí odkaz:
https://doaj.org/article/934b0ab922534de6b58c431afd366a0b
Autor:
Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 158-165 (2019)
Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that c
Externí odkaz:
https://doaj.org/article/aa7ba3dcc1f64e16b3bcd5dd9de513e9
Publikováno v:
IEEE Transactions on Electron Devices. 70:789-795
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c79ae1b262be45a6231d59026c79861
https://doi.org/10.1109/ted.2022.3227882
https://doi.org/10.1109/ted.2022.3227882