Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Daniel Bensahel"'
Publikováno v:
physica status solidi c. 8:784-787
The analysis of anodic current-potential I-V characteristics of p-type silicon in concentrated hydrofluoric acid solution shows that the mechanism at the origin of porous silicon PS formation is determined by the charge exchange at the silicon surfac
Autor:
R. Gassilloud, C. Leroux, M. Casse, Gilles Reimbold, Daniel Bensahel, M. Hopstaken, F. Martin, Thierry Billon, X. Garros
Publikováno v:
Microelectronic Engineering. 86:263-267
We report material and electrical properties of tungsten silicide metal gate deposited on 12in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSi"x thin film deposited on a hig
Autor:
Bruno Ghyselen, Yves Campidelli, Daniel Bouchier, Philippe Boucaud, Sébastien Sauvage, Daniel Bensahel, Sylvain David, Xavier Checoury, X. Li, Guy Fishman, Olivier Kermarrec, T.-P. Ngo, Takeshi Akatsu, C. Richtarch, M. El Kurdi
Publikováno v:
Thin Solid Films. 517:121-124
Two-dimensional photonic crystals are promising structures for photonic applications. Here, we show that the optical properties of two-dimensional photonic crystal membranes fabricated from silicon-on-insulator substrates can be probed at room temper
Publikováno v:
ECS Transactions. 16:427-438
We have studied the low temperature (~ 650oC), high HCl partial pressure (180 Torr) selective etch of SiGe versus Si inside a RP-CVD reactor. The surface roughness strongly increases while vertically etching fullsheet Si1-xGex layers. We have also la
Autor:
Olivier Kermarrec, M. El Kurdi, Xavier Checoury, Daniel Bensahel, Bruno Ghyselen, Sylvain David, Guy Fishman, Philippe Boucaud
Publikováno v:
Optics Communications. 281:846-850
We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. Th
Autor:
Guillaume Chabanne, Jean-Baptiste Chevrier, Yves Campidelli, T. Billon, Guillaume Pin, Olivier Kermarrec, Daniel Bensahel
Publikováno v:
Journal of Crystal Growth. 286:11-17
Nowadays, microelectronic industry targets (in term of down-scaling and throughput) require some severe reduction of the SiGe epitaxial growth temperature or/and increase of the growth rate. A possible alternative to meet these requirements is low-en
Autor:
Jiří Novák, Daniel Bensahel, Yves Campidelli, Elisabeth Müller, Gang Chen, Olivier Kermarrec, Soichiro Tsujino, N Schell, G. Bauer, Detlev Grützmacher, M. Meduna, Claudiu V. Falub
Publikováno v:
Journal of Physics D: Applied Physics. 38:A121-A125
We have investigated strain compensated Si/Si 0.2 Ge 0.8 multilayers, which were grown pseudomorphically on relaxed Si 0.5 Ge 0.5 pseudosubstrates by molecular beam epitaxy. The stability of these highly strained Si/SiGe structures upon in situ annea
Autor:
X. Checoury, V. Le Thanh, Yves Campidelli, Jean-Michel Lourtioz, S. David, Sébastien Sauvage, C. Kammerer, Olivier Kermarrec, Philippe Boucaud, S. Cabaret, X. Li, Daniel Bensahel, Daniel Bouchier, M. El Kurdi
Publikováno v:
Optical Materials. 27:792-798
We report on the integration of Ge/Si self-assembled islands into two-dimensional photonic crystals for silicon-based photonics. The photonic crystals are processed by e-beam lithography on silicon-on-insulator substrates. The room temperature photol
Autor:
Milan Friesel, Magnus Willander, Ajey Poovannummoottil Jacob, CJ Patel, Daniel Bensahel, Olivier Kermarrec, Tobias Myrberg, Yves Campidelli, O. Nur, Caroline Hernandez
Publikováno v:
Journal of Materials Science: Materials in Electronics. 15:411-417
We have used the strain sensitive tool two-dimensional reciprocal space mapping (2D-RSM) and high resolution rocking curves (HR-RC) to assess the effect of the layer thickness and the influence of ...
Autor:
Václav Holý, Mojmír Meduňa, Detlev Grützmacher, Gerrit E. W. Bauer, Yves Campidelli, Claudiu V. Falub, Olivier Kermarrec, Jiří Novák, Daniel Bensahel, Elisabeth Müller, Soichiro Tsujino
Publikováno v:
Zeitschrift für Kristallographie - Crystalline Materials. 219:195-200
For the design flexibility of SiGe based quantum cascade lasers high Ge composition Si/SiGe (x = 80%) superlattices are important. We present an X-ray small angle scattering and high-resolution X-ray diffraction study on strain compensated Si/Si1–