(Invited) On the Modeling of the Charge Pumping Curves

Autor: Daniel Bauza

Publikováno v: ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2016, 72 (2), pp.207-222. ⟨10.1149/07202.0207ecst⟩
229th ECS Meetings: 7th Int. Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufaturing-and-Solid State Topics General Session
229th ECS Meetings: 7th Int. Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufaturing-and-Solid State Topics General Session, D. Misra, K. Sundaram, H. Iwai, T. Chikyo, Y. Obeng, Z. Chen, D. Bauza, O. Leonte and K. Shimanura, May 2016, San Diego, United States

The Charge Pumping (CP) technique has been used to characterize insulator semiconductor interface traps in numerous device types and in a wealth of situations [1]. A few years ago and for the first time, the three basic CP curves types recorded from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0755798cefb24652a5404005bfb7feb
https://hal.archives-ouvertes.fr/hal-02015172

Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

Autor: Prashant Majhi, Karim Cherkaoui, Paul K. Hurley, Daniel Bauza, M. A. Negara, Gerard Ghibaudo, Wilman Tsai

Publikováno v: ECS Transactions. 11:639-644

A degradation of low field mobility has been widely reported for HfO2/TiN gate MOSFETs [1, 2]. It has recently been demonstrated that interface defect densities in the range 3-4x10cm do not yield significant mobility degradation [3, 4]. However, as w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::389b75645229f8a6d6d7d47a59e5542d
https://doi.org/10.1149/1.2779598

On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics

Autor: Daniel Bauza, Oussama Ghobar, Bernard Guillaumot

Publikováno v: ECS Transactions. 6:219-227

A general and reliable model for charge pumping (CP) proposed recently has been extended to trap depth distributions towards oxides depth. The fundamental features concerning the energy and depth region probed at the Si-SiO2 interface and in the dire

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08df4b4354a08c58cbb2f0a2f205487a
https://doi.org/10.1149/1.2727404

Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric

Autor: M. A. Negara, Daniel Bauza, Niti Goel, Gerard Ghibaudo, Paul K. Hurley

Publikováno v: Microelectronic Engineering. 88:1095-1097

This paper reports on an investigation of interface state densities, low frequency noise and electron mobility in surface channel In"0"."5"3Ga"0"."4"7As n-MOSFETs with a ZrO"2 gate dielectric. Interface state density values of D"i"t~5x10^1^2cm^-^2 eV

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c788b8c8c9a57578dcf4c16909d56413
https://doi.org/10.1016/j.mee.2011.03.091

Tutorials

Autor: Daniel Bauza, Ryoichi Ishihara

Publikováno v: 2011 IEEE International Integrated Reliability Workshop Final Report.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c20e18b6455f6937ec2e116ddbd369dc
https://doi.org/10.1109/iirw.2011.6142612