Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Daniel B. Bergstrom"'
Autor:
Lars Hultman, Ivan Petrov, Jra Carlsson, J.-S. Chun, C. Cabral, Patrick Desjardins, Christian Lavoie, Joseph E Greene, Daniel B. Bergstrom
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:182-191
Dense fully-002-textured polycrystalline TiN layers, 110 nm thick with a N/Ti ratio of 1.02±0.03, were grown on SiO2 by ultrahigh vacuum magnetically unbalanced magnetron sputter deposition at Ts=450 °C in pure N2 utilizing high N2+/Ti flux ratios
Publikováno v:
Journal of Applied Physics. 87:168-171
Highly textured epitaxial metallizations will be required for the next generation of devices with the main driving force being a reduction in electromigration. Herein a model system of 190 nm of Al on a 140 nm layer of W grown on MgO 〈00l〉 substr
Publikováno v:
Journal of Applied Physics. 82:2312-2322
Polycrystalline bcc TixW1−x layers with mixed 011 and 002 texture were grown on oxidized Si(001) substrates at 600 °C by ultrahigh-vacuum (UHV) magnetron sputter deposition from W and Ti0.33W0.67 targets using both pure Ar and Xe discharges. Ti co
Publikováno v:
Journal of Applied Physics. 82:201-209
Polycrystalline bcc W layers, 110 nm thick with 011 preferred orientation and an average grain size of 40 nm, were grown on amorphous-SiO2/Si(001) substrates by ultrahigh vacuum (UHV) magnetron sputter deposition at Ts=600 °C. Al overlayers, 170 nm
Autor:
Ivan Petrov, Daniel B. Bergstrom, T. Trinh, T. Hurkmans, P. Losbichler, Joseph E Greene, Wolf-Dieter Münz
Publikováno v:
Scopus-Elsevier
The microstructure and microchemistry of polycrystalline Ti1−x−yAlxNbyN alloys and Ti1−xAlxN/Ti1−yNbyN multilayers grown on bee ferritic stainless steel substrates at 450 °C by unbalanced-magnetron (UBM) sputter deposition and combined UBM/c
Autor:
Joseph E Greene, Ivan Petrov, J.-E. Sundgren, Brian W. Karr, Daniel B. Bergstrom, Lynnette D. Madsen, Yongdeok Kim, David G. Cahill
Publikováno v:
Journal of Applied Physics. 80:6699-6705
A low‐energy, high‐brightness, broad beam Cu ion source is used to study the effects of self‐ion energy Ei on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and Si(001) substrates are verified by in situ scann
Publikováno v:
Journal of Applied Physics. 78:5395-5403
The effects of the incident ion/metal flux ratio (1≤Ji /JTi≤15), with the N+2 ion energy Ei constant at ≂20 eV (≂10 eV per incident accelerated N), on the microstructure, texture, and stoichiometry of polycrystalline TiN films grown by ultrah
Publikováno v:
Journal of Applied Physics. 78:194-203
Single‐crystal bcc W(001) layers, 140 nm thick, were grown on MgO(001) substrates by ultrahigh‐vacuum (UHV) magnetron sputter deposition at Ts=600 °C. Al overlayers, 190 nm thick with strong (001) and (011) preferred orientation and an average g
Autor:
Christopher D. Thomas, Michael L. Hattendorf, Mark R. Brazier, K. Zawadzki, R. McFadden, P. Hentges, J. Seiple, W. Han, D. Ingerly, S. Jaloviar, Cory E. Weber, Huichu Liu, Robert James, C. Auth, C. Parker, Kaizad Mistry, M. Prince, V. Chikarmane, S. Ramey, J. Neirynck, A. Blattner, J. Roesler, M. Bost, P. Yashar, D. Hanken, J. Jopling, Ian R. Post, B. McIntyre, C. Kenyon, T. Troeger, S. Pradhan, Pulkit Jain, D. Towner, C. Allen, David Jones, J. Hicks, Timothy E. Glassman, J. Sandford, L. Pipes, R. Heussner, T. Reynolds, M. Buehler, Daniel B. Bergstrom, Tahir Ghani, Pete Smith, R. Grover, Subhash M. Joshi
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
A 22nm generation logic technology is described incorporating fully-depleted tri-gate transistors for the first time. These transistors feature a 3rd-generation high-k + metal-gate technology and a 5th generation of channel strain techniques resultin
Autor:
Claudia Wiemer, Joseph E Greene, Ivan Petrov, J. Moser, Daniel B. Bergstrom, O. Haller, F. Tian
Publikováno v:
Scopus-Elsevier
Single-phase 300 nm thick Bl-NaCl structure polycrystalline Ti1−xWxN alloys, with compositions extending from TiN to Ti0.3W0.7N, have been grown at 500°C on amorphous SiO2 by ultra-high vacuum reactive magnetron sputtering from Ti and W targets in