Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Daniel A. Haeger"'
Autor:
James S. Speck, Erin C. Young, Gregory A. Garrett, Roy B. Chung, Daniel A. Haeger, Paul Rotella, Hongen Shen, Nathan Pfaff, Steven P. DenBaars, Michael Wraback, Daniel A. Cohen
Publikováno v:
physica status solidi (b). 249:507-510
Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar () orientation wh
Autor:
James S. Speck, Daniel A. Haeger, Robert M. Farrell, Steven P. DenBaars, Kathryn M. Kelchner, Michael Iza, Shuji Nakamura, Kenji Fujito, X. Chen, Sarah L. Keller, Arpan Chakraborty, Asako Hirai
Publikováno v:
Journal of Crystal Growth. 313:1-7
The properties of Si-doped GaN (GaN:Si) thin films and InGaN/GaN light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition on free-standing {1 0 1 0} m -plane GaN substrates were investigated with regard to carrier gas and substrat
Autor:
St. P. DenBaars, Daniel A. Cohen, Kathryn M. Kelchner, Kenji Fujito, Apran Chakraborty, Robert M. Farrell, Matthew T. Hardy, James S. Speck, Daniel A. Haeger, Shuji Nakamura, Po S. Hsu
Publikováno v:
physica status solidi c. 8:2226-2228
The effect of thick n-type Al0.12Ga0.88N cleave assistance layers (CALs) on the morphology of c -plane cleaved facets was investigated for m -plane InGaN/GaN laser diode (LD) ridge waveguide structures. Five LD structures with AlGaN CAL thicknesses r
Autor:
Po Shan Hsu, Hiroaki Ohta, Anurag Tyagi, James S. Speck, Shuji Nakamura, Kenji Fujito, Kathryn M. Kelchner, Steven P. DenBaars, Erin C. Young, Daniel A. Haeger, Junichi Sonoda, Robert M. Farrell, Alexey E. Romanov
Publikováno v:
physica status solidi c. 8:2390-2392
We demonstrate the first blue AlInGaN-based laser diodes (LDs) grown on semipolar (33) free-standing GaN substrates. Etched facet ridge waveguide LDs were fabricated and tested under pulsed operation. Lasing was achieved at 477.5 nm with a threshold
Autor:
Daniel A. Haeger, Daniel F. Feezell, Kenji Iso, Kenji Fujito, Robert M. Farrell, James S. Speck, Makoto Saito, Kathryn M. Kelchner, Shuji Nakamura, Daniel A. Cohen, Mathew C. Schmidt, Hisashi Yamada, Steven P. DenBaars
Publikováno v:
Japanese Journal of Applied Physics. 46:L761-L763
We demonstrate continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating
Autor:
Alexey E. Romanov, Daniel A. Cohen, Erin C. Young, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Daniel A. Haeger, Feng Wu, Roy B. Chung
Publikováno v:
Conference on Lasers and Electro-Optics 2012.
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
Autor:
Daniel A. Haeger, Casey Holder, Shuji Nakamura, Kenji Fujito, Robert M. Farrell, James S. Speck, Po Shan Hsu, Daniel A. Cohen, Steven P. DenBaars, Kathryn M. Kelchner
Publikováno v:
69th Device Research Conference.
We have previously demonstrated the AlGaN-cladding-free (ACF) laser diode (LD) concept over a wide visible spectral range and various nonpolar/semipolar crystallographic orientations. The benefits of this ACF epitaxial design include lower operating
Autor:
Daniel A. Haeger, Daniel A. Cohen, Steven P. DenBaars, Roy B. Chung, Erin C. Young, James S. Speck
Publikováno v:
CLEO:2011 - Laser Applications to Photonic Applications.
The use of nonpolar or semipolar AlGaN for UV-C diode lasers avoids the compromises in gain, injection efficiency, and ohmic losses imposed on c-plane lasers by the unusual valence band structure of AlGaN alloys.
Autor:
Feng Wu, Matthew T. Hardy, Po Shan Hsu, James S. Speck, Steven P. DenBaars, Daniel A. Haeger, Shuji Nakamura
Publikováno v:
Journal of Applied Physics. 114:183101
Semipolar oriented laser diodes (LDs) have fundamental advantages over c-plane oriented LDs, however, the thickness and composition of InGaN waveguiding layers and AlGaN cladding are limited by the onset of stress relaxation via threading dislocation
Autor:
Robert M. Farrell, Shuji Nakamura, Daniel A. Haeger, Kenji Fujito, James S. Speck, Steven P. DenBaars
Publikováno v:
Journal of Applied Physics. 113:063504
We report on the morphological evolution of InGaN/GaN light-emitting diodes (LEDs) grown on nominally on-axis and intentionally misoriented free-standing m-plane GaN substrates. Large variations in p-n junction depth (±175nm) were observed for LEDs