Zobrazeno 1 - 10 of 238 pro vyhledávání: '"Daniel, Chrastina"'
1
Akademický článek
A gate tunable transmon qubit in planar Ge
Autor: Oliver Sagi, Alessandro Crippa, Marco Valentini, Marian Janik, Levon Baghumyan, Giorgio Fabris, Lucky Kapoor, Farid Hassani, Johannes Fink, Stefano Calcaterra, Daniel Chrastina, Giovanni Isella, Georgios Katsaros
Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivi
Externí odkaz: https://doaj.org/article/8c18e51a50e641fe81b8b7c0d94b2652
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2
Akademický článek
Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium
Autor: Marco Valentini, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, Juan Aguilera Servin, Kushagra Aggarwal, Marian Janik, Thomas Adletzberger, Rubén Seoane Souto, Martin Leijnse, Jeroen Danon, Constantin Schrade, Erik Bakkers, Daniel Chrastina, Giovanni Isella, Georgios Katsaros
Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as t
Externí odkaz: https://doaj.org/article/131573f81a0d4811bcce68cd01d43d0e
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4
Akademický článek
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
Autor: Mani Azadmand, Stefano Vichi, Federico Guido Cesura, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Giovanni Maria Vanacore, Shiro Tsukamoto, Stefano Sanguinetti
Publikováno v: Nanomaterials, Vol 12, Iss 21, p 3887 (2022)
We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. T
Externí odkaz: https://doaj.org/article/7be522391de84c56b692380126929fc8
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5
Akademický článek
Design and simulation of waveguide-integrated Ge/SiGe quantum-confined Stark effect optical modulator based on adiabatic coupling with SiGe waveguide
Autor: Worawat Traiwattanapong, Papichaya Chaisakul, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Laurent Vivien, Delphine Marris-Morini
Publikováno v: AIP Advances, Vol 11, Iss 3, Pp 035117-035117-9 (2021)
We report on the design and simulation of a waveguide-integrated Ge/SiGe quantum-confined Stark effect (QCSE) optical modulator based on the use of a Ge-rich SiGe relaxed buffer on a graded buffer as an optical waveguide. Despite the promising potent
Externí odkaz: https://doaj.org/article/a8757aab128b453eaf9f3a8162dc126e
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6
Akademický článek
Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
Autor: Papichaya Chaisakul, Vladyslav Vakarin, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Laurent Vivien, Delphine Marris-Morini
Publikováno v: Photonics, Vol 6, Iss 1, p 24 (2019)
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorpo
Externí odkaz: https://doaj.org/article/773ef8725d094fadb71a418c1d19c357
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7
Tailoring of embedded dielectric alumina film in AlGaAs epilayer by selective thermal oxidation
Autor: Giulio Tavani, Andrea Chiappini, Alexey Fedorov, Francesco Scotognella, Stefano Sanguinetti, Daniel Chrastina, Monica Bollani
Vertical optical confinement is a critical requirement for a wide range of III-V photonic devices where Al2O3 material is the typical oxide used due to its low refractive index. This oxide layer can be formed from the oxidation of AlAs in an epitaxia
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c82855b6a62bdf5d7bc27751ec999d93
https://hdl.handle.net/11311/1206776
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9
Mid-infrared Second Harmonic Generation in SiGe Quantum Wells
Autor: Eva Olsson, Michele Virgilio, Jonas Allerbeck, Virginia Falcone, Daniele Brida, Jacopo Frigerio, Andrea Mancini, L. Baldassarre, Michele Ortolani, M. De Seta, Daniel Chrastina, Lunjie Zeng, C. Ciano, Andrea Ballabio, Joel Kuttruff
Publikováno v: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Inversion-symmetry breaking for second-harmonic generation in centrosymmetric Si and Ge is artificially realized with a pair of asymmetric-coupled SiGe quantum wells. Laser spectroscopy experiments demonstrate a nonlinear susceptibility four orders o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76c37e40ef46e9414774ff34b7e7b59d
https://doi.org/10.1109/irmmw-thz50926.2021.9567195
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10
Engineering of the spin on dopant process on silicon on insulator substrate
Autor: Erfan Mafakheri, Giulio Tavani, Alexey Fedorov, Michele Perego, Mario Lodari, Andrea Barzaghi, Daniel Chrastina, Chiara Barri, Elisa Arduca, Francesco Scotognella, Luca Fagiani, Marco Abbarchi, Jacopo Frigerio, Monica Bollani
Publikováno v: Nanotechnology, 32(2)
Nanotechnology
Nanotechnology (Bristol, Online) (2021). doi:10.1088/1361-6528/abbdda
info:cnr-pdr/source/autori:Chiara Barri, Erfan Mafakheri, Luca Fagiani, Giulio Tavani, Andrea Barzaghi, Daniel Chrastina, Alexey Fedorov, Jacopo Frigerio, Mario Lodari, Francesco Scotognella, Elisa Arduca, Marco Abbarchi, Michele Perego, Monica Bollani/titolo:Engineering of the spin on dopant process on silicon on insulator substrate/doi:10.1088%2F1361-6528%2Fabbdda/rivista:Nanotechnology (Bristol, Online)/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume
Nanotechnology, 2020, 32 (2), pp.025303
We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2820540ce06e6e358be47d8274aa73e8
http://resolver.tudelft.nl/uuid:1959a311-9279-4652-884b-fcbd120731a0
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