Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Dani Hak"'
Autor:
Frederic Y. Gardes, W. R. Headley, Branislav Timotijevic, Graham T. Reed, Goran Z. Masanovic, Mario J. Paniccia, Dani Hak, Oded Cohen
Publikováno v:
Journal of Optics A: Pure and Applied Optics. 8:S473-S476
In an effort to find low-cost alternatives for components currently used in dense wavelength division multiplexing (DWDM), various devices fabricated on silicon-on-insulator (SOI) have been investigated. Many include modulators, filters, and switches
Publikováno v:
Journal of Lightwave Technology. 24:1440-1455
Achieving light amplification and lasing in silicon is one of most challenging goals in silicon-based optoelectronics. As a nonlinear optical effect, stimulated Raman scattering (SRS) provides a means to generate optical gain in silicon. Recent resul
Autor:
Dani Hak, Mario J. Paniccia, Oded Cohen, Richard Jones, Alexander W. Fang, Haisheng Rong, Ansheng Liu
Publikováno v:
Nature. 433:725-728
Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulat
Publikováno v:
Applied Physics Letters. 85:2196-2198
We fabricated a low-loss (∼0.22dB∕cm) rib waveguide (WG) in silicon-on-insulator with a small effective core area of ∼1.57μm2 and measured the stimulated Raman scattering gain in the WG. We obtained 2.3dB Raman gain in a 4.8-cm-long S-shaped W
Publikováno v:
Optics express. 13(5)
In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias volta
Autor:
Haisheng Rong, Dani Hak, Richard Jones, Alexander W. Fang, Ansheng Liu, Mario J. Paniccia, Oded Cohen
Publikováno v:
Optics express. 13(2)
We observe for the first time net continuous wave optical gain in a low loss silicon-on-insulator waveguide based on stimulated Raman scattering. We show that nonlinear optical loss due to two-photon absorption induced free carrier absorption can be
Publikováno v:
Optics express. 12(18)
We observe for the first time net optical gain in a low loss silicon waveguide in silicon-on-insulator (SOI) based on stimulated Raman scattering with a pulsed pump laser at 1.545 microm. We show that pulsed pumping with a pulse width narrower than t
Autor:
Vittorio M. N. Passaro, Dani Hak, W. R. Headley, Frederic Y. Gardes, Goran Z. Mashanovich, Ansheng Liu, Mario J. Paniccia, Ching Eng Png, Seong Phun Chan, Graham T. Reed, N.G. Emerson, Branislav Timotijevic, P. Waugh
Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes in device and technology development. Despite early work dating back to the mid-1980s, dramatic progress has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b05310ea9688177b263514d01b6c312
http://hdl.handle.net/11589/2203
http://hdl.handle.net/11589/2203
Publikováno v:
SPIE Proceedings.
With a reverse biased p-i-n structure embedded in a silicon waveguide, we efficiently reduced the nonlinear loss due to two photon absorption induced free carrier absorption and achieved continuous-wave net gain and lasing in a silicon waveguide cavi
Autor:
Rami Cohen, Doron Rubin, Ling Liao, Haisheng Rong, Mario J. Paniccia, Ulrich D. Keil, Richard Jones, Dani Hak, Oded Cohen, Dean A. Samara-Rubio, Thorkild Franck, Ansheng Liu
Publikováno v:
SPIE Proceedings.
Due to the mature silicon fabrication technology and vast existing infrastructures, silicon photonics has a chance to offer low cost solutions to telecommunications and data communications. It could also enable a chip-scale platform for monolithic in