Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dana Teasdale"'
Autor:
Yoshihide Senzaki, Dana Teasdale, Phillip Schubert, Robert Herring, Gary Hoeye, Lawrence Page
Publikováno v:
ChemInform. 32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d6fdc61661d1fcddc423e086a36b15
https://doi.org/10.1002/chin.200130237
https://doi.org/10.1002/chin.200130237
The high cost of retrofitting buildings with advanced lighting control systems is a barrier to adoption of this energy-saving technology. Wireless technology, however, offers a solution to mounting installation costs since it requires no additional w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a0a0e7291611b521ab741b4fc13e4c6
https://doi.org/10.2172/920583
https://doi.org/10.2172/920583
Publikováno v:
9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001.
We have developed single-wafer RTP modules for LPCVD of silicon nitride, oxynitride, oxide, and oxide/nitride/oxide (ONO) composite films. All films were deposited from dichlorosilane (DCS) as a silicon source gas. The deposition of 20-40 /spl Aring/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::717a7218a6bae7897fcb4964b261ef80
https://doi.org/10.1109/rtp.2001.1013766
https://doi.org/10.1109/rtp.2001.1013766
Autor:
Joseph Sisson, Brichko Yakov, Robert Herring, Marci Schaefer, Yoshihide Senzaki, Carl Barelli, Dana Teasdale
Publikováno v:
MRS Proceedings. 716
Using a hot-wall rapid thermal system which permits single-wafer processing, thin gate dielectrics consisting of silicon nitride films were fabricated by low pressure chemical vapor deposition (LPCVD). Nitride layers deposited from dichlorosilane (DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce3fe05a57e85e013d4d6930700f0e9a
https://doi.org/10.1557/proc-716-b2.10
https://doi.org/10.1557/proc-716-b2.10
Autor:
Dana Teasdale, Yoshihide Senzaki, Phillip Schubert, Robert Herring, Gary Hoeye, Lawrence Page
Publikováno v:
Electrochemical and Solid-State Letters. 4:F11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808ae93bcab840808a9d6749ca0e40d5
https://doi.org/10.1149/1.1359056
https://doi.org/10.1149/1.1359056