Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dana Cohen-Azarzar"'
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111118-111118-6 (2023)
Conducting oxide interfaces have attracted considerable attention, motivated by both fundamental science and potential for oxide electronic devices. An important gap for maturing such device technology is scalability and routes to control the electro
Externí odkaz:
https://doaj.org/article/15da989585434a18a9d005db24872b7d
Autor:
Dror Miron, Eilam Yalon, Felix Palumbo, Noa Segev, Maria Baskin, Dana Cohen-Azarzar, Lior Kornblum
Publikováno v:
Journal of Applied Physics. 128:045306
Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33d237dc9d8c633a2842f4e0ceb5fd0f
https://doi.org/10.1063/1.5139533
https://doi.org/10.1063/1.5139533
Autor:
Lior Kornblum, Barak Hoffer, Maria Baskin, Dana Cohen-Azarzar, Shahar Kvatinsky, Dror Miron, Eilam Yalon
Publikováno v:
Applied Physics Letters. 116:223503
A non-volatile resistive switching device is demonstrated, utilizing a 2D electron gas (2DEG) between a SrTiO3 substrate and an amorphous Al2O3 layer. A large resistance window is observed, and its origin is discussed. We pinpoint the role of the oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6754a946c58bf10345891dc5cd4c6412
https://doi.org/10.1063/5.0003590
https://doi.org/10.1063/5.0003590
Publikováno v:
Journal of Applied Physics. 123:245307
2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at non-epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20a1d53a1befaf0aa2a4a843768f1296
https://doi.org/10.1063/1.5030119
https://doi.org/10.1063/1.5030119