Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Dan-Hua Hsieh"'
Autor:
Yu-Kuang Liao, Yung-Tsung Liu, Dan-Hua Hsieh, Tien-Lin Shen, Ming-Yang Hsieh, An-Jye Tzou, Shih-Chen Chen, Yu-Lin Tsai, Wei-Sheng Lin, Sheng-Wen Chan, Yen-Ping Shen, Shun-Jen Cheng, Chyong-Hua Chen, Kaung-Hsiung Wu, Hao-Ming Chen, Shou-Yi Kuo, Martin D. B. Charlton, Tung-Po Hsieh, Hao-Chung Kuo
Publikováno v:
Nanomaterials, Vol 7, Iss 4, p 78 (2017)
Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-qua
Externí odkaz:
https://doaj.org/article/01a8674d7b604d3bbb6eadb730bd30b9
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
The effect of Cu(In,Ga)Se2 (CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The mod
Externí odkaz:
https://doaj.org/article/959b606cbef04439a2a5a657027a70e1
Autor:
Dan-Hua Hsieh, 解丹華
99
In this article,we have grown InN epilayers on sapphire substrate with GaN buffer layer, and the V/III ratio is fixed at 1:1,growth temperature varied from 495°C to 525°C. After growing,we investigated the three samples by SEM, and observed
In this article,we have grown InN epilayers on sapphire substrate with GaN buffer layer, and the V/III ratio is fixed at 1:1,growth temperature varied from 495°C to 525°C. After growing,we investigated the three samples by SEM, and observed
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69624990588237748451
Autor:
Shou-Yi Kuo, Jui-Fu Yang, Woei-Tyng Lin, Yu-Chao Hsu, Wei-Chun Chen, Fang-I Lai, Dan-Hua Hsieh
Publikováno v:
Catalysts
Volume 11
Issue 6
Catalysts, Vol 11, Iss 737, p 737 (2021)
Volume 11
Issue 6
Catalysts, Vol 11, Iss 737, p 737 (2021)
In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66aa90d85fb30c3da814fb7fd63a83d
https://doi.org/10.3390/catal11060737
https://doi.org/10.3390/catal11060737
Autor:
Jhih-Kai Huang, Tsung Sheng Kao, An-Jye Tzou, Chun-Yen Chang, Dan-Hua Hsieh, Kuo-Bin Hong, Hao-Chung Kuo, Yang-Fang Chen, Da-Wei Lin, Chyong-Hua Chen, Tzu-Pei Chen, Tien-Chang Lu
Publikováno v:
IEEE Transactions on Nanotechnology. 16:355-358
In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core–shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324d3a6a3d461f92a108dbc22dc93f83
https://doi.org/10.1109/tnano.2016.2642146
https://doi.org/10.1109/tnano.2016.2642146
Autor:
Jason Jyehong Chen, Xin-Nan Chen, Jia-Liang Yen, Jin-Wei Shi, Kai-Lun Chi, Dan-Hua Hsieh, Ying-Jay Yang, Hao-Chung Kuo
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-7
In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/ $2~\lambda $ asymmetric cavity design,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5ca2e79759b6d69ff591dc17ab0df1
https://doi.org/10.1109/jqe.2016.2611439
https://doi.org/10.1109/jqe.2016.2611439
Autor:
Chia-Chien Wei, Kuan-Zhou Chen, I-Cheng Lu, Wei Lin, Jin-Wei Shi, Jyehong Chen, Cheng-Hsiang Huang, Shi-Wei Chiu, Hsing-Yu Chen, Hao-Chung Kuo, Kai-Lun Chi, Fan-I Lai, Dan-Hua Hsieh
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:444-452
In order to investigate the tradeoff between optical spectral width and modulation speed of 850-nm Zn-diffusion vertical-cavity surface-emitting laser (VCSEL) and its influence on the performance of discrete multitone (DMT) modulation, two kinds of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bebfd0811b736a3040d818f9d0dba6c
https://doi.org/10.1109/jstqe.2015.2421324
https://doi.org/10.1109/jstqe.2015.2421324
Publikováno v:
Handbook of GaN Semiconductor Materials and Devices ISBN: 9781315152011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe30ddb008f22b5f2c3b26966d7390fb
https://doi.org/10.1201/9781315152011-21
https://doi.org/10.1201/9781315152011-21
Autor:
An Jye Tzou, Wei Sheng Lin, Hao Ming Chen, Shou-Yi Kuo, Martin D. B. Charlton, Yung Tsung Liu, Yu Lin Tsai, Yen Ping Shen, Dan Hua Hsieh, Hao-Chung Kuo, Tien Lin Shen, Ming Yang Hsieh, Tung Po Hsieh, Shun-Jen Cheng, Yu Kuang Liao, Sheng Wen Chan, Chyong-Hua Chen, Kaung-Hsiung Wu, Shih Chen Chen
Publikováno v:
Nanomaterials, Vol 7, Iss 4, p 78 (2017)
Nanomaterials; Volume 7; Issue 4; Pages: 78
Nanomaterials
Nanomaterials; Volume 7; Issue 4; Pages: 78
Nanomaterials
Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a19bc8f3fd21a839decb794372ba78b
http://www.mdpi.com/2079-4991/7/4/78
http://www.mdpi.com/2079-4991/7/4/78
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
The effect of Cu(In,Ga)Se2(CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27042c0d26e0368e84025fd5aae0fa59
https://doi.org/10.1155/2014/186579
https://doi.org/10.1155/2014/186579