Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Dan Kinzer"'
Autor:
Dan Kinzer
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Gallium Nitride power integrated circuits are ramping into high volume and showing unprecedented efficiency, density, and system cost advantages. The technology delivers a complement of scalable devices with models, and a full suite of verification t
Autor:
Dan Kinzer, Stephen Oliver
Publikováno v:
IEEE Power Electronics Magazine. 3:14-21
The 2016 IEEE Applied Power Electronics Conference featured more than 100 papers [1] based on gallium nitride (GaN) power components up to 650 V, yet market adoption of GaN in off-line alternating current (ac) or 400 V direct current (dc) input conve
Autor:
Paul R. Chalker, Ruiyang Yu, Marleen Van Hove, Geoff Haynes, Enrico Zanoni, Jie Hu, Xu Li, Hiroshi Amano, Daniel Piedra, Hiroji Kawai, Min Sun, Martin Kuball, Qingyun Huang, L. Di Cioccio, Carlo De Santi, Rongming Chu, Matthew Charles, Yuhao Zhang, Rekha Reddy, Erwan Morvan, Joseph J. Freedsman, Akira Nakajima, Tomas Palacios, Thomas Heckel, Denis Marcon, Shu Yang, Stephen Oliver, A. Torres, Oliver Häberlen, Stefan Zeltner, Dan Kinzer, Marc Plissonnier, Vineet Unni, Iain G. Thayne, Gaudenzio Meneghesso, Patrick Fay, David J. Wallis, Mengyuan Hua, Chris Youtsey, Shuichi Yagi, Sheng Jiang, Alex Q. Huang, Louis J. Guido, Matteo Meneghini, Ashwani Kumar, Jingshan Wang, Dilini Hemakumara, Nicola Trivellin, Martin Marz, Jinqiao Xie, Nadim Chowdhury, Maria Merlyne De Souza, T Bouchet, Michael J. Uren, Bernd Eckardt, Ekkanath Madathil Sankara Narayanan, Peter A. Houston, K. B. Lee, Matteo Borga, Yannick Baines, Takashi Egawa, Robert McCarthy, Stefaan Decoutere, Kevin J. Chen
Publikováno v:
Journal of Physics D: Applied Physics
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At
Autor:
Dan Kinzer
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the
Autor:
Dan Kinzer
Publikováno v:
Microelectronics Journal. 35:225-233
This paper describes recent advances in power semiconductor devices, integrated circuits, and packages for DC/DC converter applications. Special emphasis is placed on the latest discrete power MOSFET devices and packages. Features and trends in ICs f
Publikováno v:
2013 IEEE Energytech.
Technologies such as Plug-in Hybrid Electric Vehicles (PHEV), Photovoltaics (PV), high efficiency electric motor drives, etc. will reduce energy related emissions and US dependency on fossil fuels and foreign oil. However commercial adoption of these
Publikováno v:
2012 IEEE 62nd Electronic Components and Technology Conference.
Comprehensive finite element analysis (FEA) modeling is carried out to improve the performance of critical designs of wafer level chip scale package (WLCSP). First, a design with one layer redistribution layout (RDL) copper with etched pocket in the
Autor:
Yong Liu, Dan Kinzer
Publikováno v:
2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
Power electronic packaging is one of the fastest changing areas of technology in the power electronic industry due to the rapid advances in power integrated circuit (IC) fabrication and the demands of a growing market in almost all areas of power ele
Publikováno v:
2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
The electrical performance (such as electrical resistance, inductance and fusing current capability) is a key factor for a power electronic product. Studying the impact of the defect on package electrical performance, especially for the parasitic eff
Publikováno v:
1987 IEEE Power Electronics Specialists Conference.
This paper describes a small switching power supply capable of direct operation from any dc source in the 100 to 450 volts range. The heart of the design is a single high voltage integrated circuit which includes the high voltage power switch and all