Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dan Franca"'
Autor:
Katherine Sieg, Christopher R. Carr, Karsten Schaefer, M. F. Chen, Christopher L. Borst, David Skilbred, Jong-heun Lim, Kosta Culafi, Milo Tallon, Norman Fish, Frank Robertson, Chulgi Song, John Hagwood, Anne-Sophie Larrea, Angelo Alaestante, Mark Kelling, ChungJu Yang, Denis Sullivan, WenLi Collision, Nithin Yathapu, Hsi-Wen Liu, Yii-Cheng Lin, Cheng-Chung Chien, Erin Fria, Regina Swaine, Gerard Stapf, Dan Franca, BumKi Moon, K. K. W. Lee, Bruce Gall, Jamie Prudhomme, Yu-Lieh Fu, Alexander Bialy, Stock Chang, Shannon Dunn, Michael Bryant, Lin Pinyen, Huey-Ming Wang, Joe Maniscalco, Richard Conti, Rand Cottle, Barry Wang, Steven Smith, Sun-OO Kim
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
At 450mm wafer area, the first Cu BEOL module process was demonstrated with a single damascene structure using low-k ILD, TiN metal hard mask and guided 20nm half-pitched lamella BCP DSA patterning. It showed the potential opportunities, technical fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f5a6641fe5a8a4871bd779ed63e8be
https://doi.org/10.1109/iitc-amc.2016.7507638
https://doi.org/10.1109/iitc-amc.2016.7507638
Publikováno v:
MRS Proceedings. 1562
This work investigates scanning laser annealing used for ultra-shallow junction (USJ) activation. We investigate the laser system via simulation to determine the peak temperature achieved in the active area during processing. We employed the Sentauru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ade36144adf323cca72a49212f050ff5
https://doi.org/10.1557/opl.2013.825
https://doi.org/10.1557/opl.2013.825
Autor:
Dan Franca, Martin Rodgers, Christopher L. Borst, Josh Herman, T. Michalak, Adarsh Basavalingappa
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:011201
Millisecond anneal techniques have been demonstrated to achieve fully recrystallized, highly activated, shallow, and abrupt junctions in silicon with both p- and n-type dopants due to the technique's fast time scale and high temperature. To understan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e688f4ee4e748e17f1243a155e6b9a2
https://doi.org/10.1116/1.4902020
https://doi.org/10.1116/1.4902020