Zobrazeno 1 - 10 of 48 pro vyhledávání: '"Dan Fekete"'
1
The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection
Autor: Dan Fekete, Asaf Albo, Gad Bahir
Publikováno v: Infrared Physics & Technology. 96:68-76
We propose and demonstrate a novel concept to address high-performance, extended short wavelength (e-SWIR) photodetectors. Our approach is based on shifting the well-developed GaAs quantum-well infrared photodetector (QWIP) technology to e-SWIR wavel
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c6a2b3099687dbe40d9500e585ec407
https://doi.org/10.1016/j.infrared.2018.11.003
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2
Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
Autor: Antonio Polimeni, Giorgio Pettinari, Marco Felici, Damiano Giubertoni, E. Sterzer, Aldo Amore Bonapasta, Kerstin Volz, Eli Kapon, Elena Blundo, Saeed Younis, Giuseppe Mattioli, Dan Fekete, Francesco Filippone
Publikováno v: Advanced functional materials
32 (2021): 2108862. doi:10.1002/adfm.202108862
info:cnr-pdr/source/autori:Filippone, Francesco; Younis, Saeed; Mattioli, Giuseppe; Felici, Marco; Blundo, Elena; Polimeni, Antonio; Pettinari, Giorgio; Giubertoni, Damiano; Sterzer, Eduard; Volz, Kerstin; Fekete, Dan; Kapon, Eli; Amore Bonapasta, Aldo/titolo:Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix%2FDefect Engineering Paradigm/doi:10.1002%2Fadfm.202108862/rivista:Advanced functional materials (Print)/anno:2021/pagina_da:2108862/pagina_a:/intervallo_pagine:2108862/volume:32
In dilute nitride InyGa1-yAs1-xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms-inducing a significant reduction of this parameter-with that of hydrogen atoms, which neutralize the ef
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10b2a2a7c04fd7bb962a029e18d1ae0a
http://hdl.handle.net/11573/1603256
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3
InGaAs/GaAs 0.98-$\mu{\hbox {m}}$ Low-Divergence Central-Lobe Semiconductor Lasers With $\delta$-Doped Resonant Tunneling Quantum Wells
Autor: Dan Fekete, I. Shomroni
Publikováno v: IEEE Journal of Quantum Electronics. 45:700-7010
In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-mum lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c648b62e9e9b1c23047d70017fa0d59e
https://doi.org/10.1109/jqe.2009.2013145
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4
Photoluminescence studies of 〈100〉 and 〈111〉InxGa1−xAs/GaAssingle quantum wells under hydrostatic pressure
Autor: Dan Fekete, O. Brafman, T. Sauncy, Y. Finkelstein, Mark Holtz
Publikováno v: Physical Review B. 59:5056-5063
We report the results of a pressure study of strained ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ thin single quantum wells (QW's) grown along [100] and [111] directions. The 〈100
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36b72fe7905fce1eb96ef135ac9fcd0f
https://doi.org/10.1103/physrevb.59.5056
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5
Excitation intensity dependence of photoluminescence from narrow 〈100〉- and 〈111〉A-grownInxGa1−xAs/GaAssingle quantum wells
Autor: Dan Fekete, Mark Holtz, T. Sauncy, Y. Finkelstein, O. Brafman
Publikováno v: Physical Review B. 59:5049-5055
We have used excitation intensity-dependent photoluminescence (PL) spectroscopy to study strained ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ $(x\ensuremath{\approx}0.23)$ single qu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0aaf6ef0c17fa5d8a17bf89c32a3de7
https://doi.org/10.1103/physrevb.59.5049
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6
Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector
Autor: Asaf Albo, Gad Bahir, Dan Fekete
Publikováno v: physica status solidi c. 5:2323-2325
We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e19726ca311edad907ae5d29b30eb05
https://doi.org/10.1002/pssc.200778741
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7
Growth of direct bandgap GalnP quantum dots on GaP substrates
Autor: Dan Fekete, James R. Shealy, Jong-Won Lee, Joseph M. Ballantyne, Alfred T. Schremer
Publikováno v: Journal of Electronic Materials. 26:1199-1204
GaInP has a direct bandgap for In concentrations higher than approximately 30%, and the band-lineup between GaInP and GaP is type-II for In concentrations less than 60%. Therefore, in order to use GaInP as the active light-emitting layer in an optoel
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b3d5246a9532c0a8b39cca39e17f76ee
https://doi.org/10.1007/s11664-997-0020-0
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8
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires
Autor: Mario Capizzi, Elena Tartaglini, Pascal Gallo, Peter C. M. Christianen, Marco Felici, Alok Rudra, Giovanna Lavenuta, Romain Carron, Benjamin Dwir, Dan Fekete, Antonio Polimeni, Jan C. Maan, Andrea Notargiacomo, Giorgio Pettinari, Eli Kapon, Marta De Luca
Publikováno v: EMRS, pp. 556–560, 2013
info:cnr-pdr/source/autori:Felici, Marco; Polimeni, Antonio; Lavenuta, Giovanna; Tartaglini, Elena; De Luca, Marta; Capizzi, Mario; Notargiacomo, Andrea; Carron, Romain; Fekete, Dan; Gallo, Pascal; Dwir, Benjamin; Rudra, Alok; Kapon, Eli; Pettinari, Giorgio; Christianen, Peter C. M.; Maan, Jan C./congresso_nome:EMRS/congresso_luogo:/congresso_data:2013/anno:2013/pagina_da:556/pagina_a:560/intervallo_pagine:556–560
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS VOL 10 NO 4
The properties of InGaAsN V-groove QWRs are assessed here by polarization-dependent photoluminescence (PL) and micro-magneto-PL. Both the polarization anisotropy of the QWR emission and the strong dependence of the diamagnetic shift on the orientatio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a424d2d288922658260df2a36118817
https://publications.cnr.it/doc/311605
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10
Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells
Autor: Gad Bahir, Dan Fekete, Asaf Albo
Publikováno v: Physical Review B. 85
Using intersubband photocurrent spectroscopy, we have demonstrated that a bound state in the continuum exists above (Ga,In)(As,N)/(Al,Ga)As quantum wells. The photocurrent spectrum and responsivity show that the excited-state energies lie far above t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37aba830bfc00bab52d2bcd344953c36
https://doi.org/10.1103/physrevb.85.115307
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