Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Damon M. Cole"'
Publikováno v:
SPIE Proceedings.
Mask patterning capability continues to be a key enabler for wafer patterning. Mask writer performance is critical to meet reticle resolution, critical dimension uniformity, registration, and throughput requirements. Technology trends indicate that m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee6d5af0ef6159dbe6a5a0febc4c260
https://doi.org/10.1117/12.977172
https://doi.org/10.1117/12.977172
Autor:
Nathan Wilcox, Damon M. Cole, Mahesh Chandramouli, M. Kamna, M. Shumway, M. Vernon, Andrew T. Sowers
Publikováno v:
SPIE Proceedings.
Aggressive 193nm optical lithography solutions have in turn led to increasingly complex model-based OPC methodologies. This complexity married with the inevitable march of Moore's Law has produced a figure count explosion at the mask writer level. Va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4560c68c184d2360db7324ce1727d059
https://doi.org/10.1117/12.686566
https://doi.org/10.1117/12.686566
Publikováno v:
SPIE Proceedings.
SLM-based DUV laser writers are gaining acceptance for 2 nd level PSM and binary mask patterning. These writers can use an e-beam compatible resist enabling tool and process sharing. For binary mask patterning, critical metrics include: critical dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7354ab06fa1d58d62602007dfd659a1a
https://doi.org/10.1117/12.633167
https://doi.org/10.1117/12.633167
Autor:
Ping Qu, Magnus Persson, Bob Olshausen, Bruce Auches, Thomas Ostrom, Mahesh Chandramouli, Jian Ma, Robert Eklund, Peter Goransson, Damon M. Cole, Angela Beyerl, Yulia Korobko, R Zerne, Tom Newman, Sven Henrichs
Publikováno v:
SPIE Proceedings.
Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::129f0c85860824c4e2cdf638bd1b0eea
https://doi.org/10.1117/12.617359
https://doi.org/10.1117/12.617359
Publikováno v:
SPIE Proceedings.
In this paper, two negative-tone chemically amplified resists (CAR) are evaluated. The methodology and results are compared and discussed. The resists include EN-024M from TOK, and NEB 31 from Sumitomo. Both resists show high contrast, good dry etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc8f5829fbee1e3cd22199009a10301
https://doi.org/10.1117/12.557718
https://doi.org/10.1117/12.557718
Publikováno v:
SPIE Proceedings.
As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small- pattern fidelit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca9bd1836446dbfafe40f24ff1dad16a
https://doi.org/10.1117/12.425102
https://doi.org/10.1117/12.425102
Autor:
Maiying Lu, Henry Pearce-Percy, David W. Alexander, Suzanne Weaver, Wayne Phillips, Frank E. Abboud, Damon M. Cole, Thomas P. Coleman, Jan M. Chabala, Charles A. Sauer
Publikováno v:
SPIE Proceedings.
As optical lithography is extended to the 130 nm generation and beyond, demanding requirements are placed on mask pattern generators to produce quartz substrate masks. This paper reports on the lithography and critical dimension (CD) performance of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d59756678e262e9e5d4978b0b15b6a
https://doi.org/10.1117/12.377110
https://doi.org/10.1117/12.377110
Autor:
Suzanne Weaver, Maiying Lu, Frank E. Abboud, Ulrich Hofmann, Damon M. Cole, Robert J. Naber, Charles A. Sauer, Henry Pearce-Percy, Jan M. Chabala, Dinh Ton, Matthew Vernon
Publikováno v:
SPIE Proceedings.
This paper describes improvements in column design and writing strategy that, together, enable mask production for the 130 nm technology node. The MEBESR 5500 system employs a new high-dose electron gun and column design. We summarize experiments rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05744e0521323010a8d58077ba9404e7
https://doi.org/10.1117/12.373345
https://doi.org/10.1117/12.373345
Publikováno v:
SPIE Proceedings.
Analysis of pattern placement errors has shown a pattern and exposure sequence dependent component of placement error exists that cannot be accounted for by beam and stage positioning errors alone. The interaction of the electron beam (e-beam) with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fce159caff203f42779a62e111716c0
https://doi.org/10.1117/12.373348
https://doi.org/10.1117/12.373348
Autor:
Robert L. Dean, Frank E. Abboud, Charles A. Sauer, Frederick Raymond, Ulrich Hofmann, Damon M. Cole, Suzanne Weaver, Jan M. Chabala
Publikováno v:
SPIE Proceedings.
Gray-level printing is an efficient strategy to create small-address patterns on photomasks. This work provides a technical description of the multipass gray (MPG) raster- scan writing technique as implemented on the MEBES 4500S and MEBES 5000 electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bce8e141b845c8f7e67e60c5c69006af
https://doi.org/10.1117/12.351081
https://doi.org/10.1117/12.351081