Zobrazeno 1 - 10
of 1 245
pro vyhledávání: '"Damilano B"'
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Autor:
Aristegui, R., Chiaruttini, F., Jouault, B., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Chenot, S., Cordier, Y., Damilano, B.
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps i
Externí odkaz:
http://arxiv.org/abs/2203.13761
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2024 176
Autor:
Chiaruttini, F., Guillet, T., Brimont, C., Scalbert, D., Cronenberger, S., Jouault, B., Lefebvre, P., Damilano, B., Vladimirova, M.
Publikováno v:
Phys. Rev. B 103, 045308 (2021)
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density
Externí odkaz:
http://arxiv.org/abs/2010.08216
Autor:
Chiaruttini, F., Guillet, T., Brimont, C., Jouault, B., Lefebvre, P., Chenot, S., Cordier, Y., Damilano, B., Vladimirova, M.
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confineme
Externí odkaz:
http://arxiv.org/abs/1902.02974
Autor:
Damilano, B., Aristégui, R., Teisseyre, H., Vézian, S., Guigoz, V., Courville, A., Florea, I., Vennéguès, P., Bockowski, M., Guillet, T., Vladimirova, M.
Publikováno v:
Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-13, 13p
Autor:
Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.
Publikováno v:
Journal of Applied Physics; 7/21/2022, Vol. 132 Issue 3, p1-8, 8p
Autor:
Lee, C. -M., Warring, H., Vézian, S., Damilano, B., Granville, S., Khalfioui, M. Al, Cordier, Y., Trodahl, H. J., Ruck, B. J., Natali, F.
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concen
Externí odkaz:
http://arxiv.org/abs/1410.8228
Autor:
Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., Cornet, C.
Publikováno v:
Journal of Applied Physics; 10/28/2022, Vol. 132 Issue 16, p1-10, 10p
Autor:
Cooper D; University Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France., Arcara VF; CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne, France., Damilano B; CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne, France., Duboz JY; CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne, France.
Publikováno v:
Nanotechnology [Nanotechnology] 2024 Aug 12; Vol. 35 (43). Date of Electronic Publication: 2024 Aug 12.