Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Damien Jeanjean"'
Publikováno v:
ECS Transactions. 41:253-256
Latest generations of integrated circuits require some tight control of critical dimensions during photolithography's operations. Hence the introduction of dBARCs (developable Bottom Anti Reflective Coating) at many litho steps. This greatly improves
Autor:
Damien Jeanjean, Guillaume Briend, Philippe Garnier, Didier Lévy, Denis Tanon-Pellissier, Olivier Gourhant, G. Bidal, Didier Dutartre, Nicolas Breil, Yves Campidelli
Publikováno v:
ECS Transactions. 41:179-186
In this article, focus has been made on two topics: the SiGe sensitivity to wet Front-End-Of-Line (FEOL) surface preparations and the SiGe/Oxide interface. Depending on the FEOL cleaning process, the chemical oxide growth on SiGe and the associated c
Autor:
Gregoire Ducotey, Olivier Robin, Sebastien Gaillard, Damien Jeanjean, Rurh Sramek, Yufei Chen, Brian J. Brown, Frederic Pitard, Laurent Nicoud, Sébastien Mermoz
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A high yield copper damascene process requires defect-free copper surfaces after Cu CMP. In this paper we present a novel technique to improve cleaning efficiency, especially the removal of particles in the range of 20 to 80nm. This innovative Chemic
Autor:
Guillaume Briend, Philippe Garnier, Damien Jeanjean, Denis Tanon-Pellissier, Yves Campidelli, Nicolas Breil, Olivier Gourhant, Gregory Bidal, Didier Levy
Publikováno v:
ECS Meeting Abstracts. :2064-2064
not Available.