Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Damien Ducatteau"'
Autor:
J.F. Lampin, Damien Ducatteau, B. Thomas, Y. Desmet, E. Lampin, Emilien Peytavit, Etienne Okada, Fabio Pavanello, F. Graux, J. Ceru, Achim Walber
Publikováno v:
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.
We demonstrate a W-band bolometer based on a platinum nano-strip which is integrated with a waveguide probe on a polymer substrate. We measure a high thermal response of 49000 K/W thanks to the small size of the Pt resistor and the thermal properties
Autor:
Peter Frijlink, Marc Rocchi, Mohammed Zaknoune, Estelle Mairiaux, Etienne Okada, Yannick Roelens, Hassan Maher, Damien Ducatteau
Publikováno v:
IEEE Electron Device Letters. 35:321-323
We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of
Autor:
Thomas Dargent, Gilles Dambrine, Damien Ducatteau, Bernard Legrand, Didier Theron, Fei Wang, Kamel Haddadi, Nicolas Clement
Publikováno v:
45th European Microwave Conference EuMC 2015
45th European Microwave Conference EuMC 2015, Sep 2015, Paris, France. ⟨10.1109/EuMC.2015.7345849⟩
45th European Microwave Conference EuMC 2015, Sep 2015, Paris, France. ⟨10.1109/EuMC.2015.7345849⟩
International audience; We have developed an adjustable Interferometer combined to a Scanning Microwave Microscopy (ISMM) to characterize the impedance of thousands of nanocapacitors. The adjustable interferometer allows the choice of the interferenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4225cd0182e10d8ef9a347f122cea114
https://hal.laas.fr/hal-01962399
https://hal.laas.fr/hal-01962399
Publikováno v:
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
Far-field terahertz imaging is limited by diffraction to low resolutions in the 50 μm range. On the other hand, near-field optical nanoscopy is a recent technique that shows permittivity contrasts at the nanoscale. We present here images of graphene
Autor:
Didier Theron, L. Buisson, S. Houmadi, Jean-Paul Salvetat, Bernard Legrand, Jean-Pierre Aimé, Damien Ducatteau, Benjamin Walter, Pascal Merzeau, Marc Faucher, Juan Elezgaray, E. Mairiaux
Publikováno v:
28th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2015
28th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2015, Jan 2015, Estoril, Portugal. ⟨10.1109/MEMSYS.2015.7050908⟩
28th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2015, Jan 2015, Estoril, Portugal. ⟨10.1109/MEMSYS.2015.7050908⟩
International audience; We show that the capacitive transduction of a MEMS device using a setup based on a microwave detection scheme achieves the measurement of the thermomechanical noise spectrum of a high-frequency (>10 MHz) high-stiffness (>10 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aab141fc1e69f9a3932aaa382710eba9
http://hdl.handle.net/20.500.12278/117308
http://hdl.handle.net/20.500.12278/117308
Autor:
M. Rousseau, J.C. De Jaeger, Damien Ducatteau, M. Chmielowska, Yvon Cordier, J.-C. Gerbedoen, Mohammed R. Ramdani, Ali Soltani
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩
IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩
IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩
This letter reports the first millimeter-wave power demonstration of AlGaN/GaN high-electron-mobility transistors grown on a (110) silicon substrate. Owing to an AlN/AlGaN stress-mitigating stack and in spite of the twofold surface symmetry of Si (11
Publikováno v:
Electronics Letters
Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩
Electronics Letters, IET, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩
Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩
Electronics Letters, IET, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩
A report is presented on the first microwave power performances of high-k metal gate 28 nm CMOS devices. Measurements were performed in a large signal operation based on a nonlinear vector network analyser associated with a passive tuner at 10GHz. Fi
Autor:
Mohammed Zaknoune, Damien Ducatteau, Chong Jin, Dimitris Pavlidis, Etienne Okada, Marc Faucher
Publikováno v:
9th European Microwave Integrated Circuit Conference (EuMIC)
9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩
9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩
International audience; A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d666309ab886d0b9c45dbc3229011ce6
https://hal.science/hal-03286170
https://hal.science/hal-03286170
Autor:
Mohammed Zaknoune, Vanessa Avramovic, Arame Thiam, Yannick Roelens, Brice Grandchamp, Cristell Maneux, Christophe Coinon, Damien Ducatteau, Xavier Wallart
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
IEEE Electron Device Letters, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
IEEE Electron Device Letters, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdd6dcdbf346770964edd01f22921b4a
https://hal.archives-ouvertes.fr/hal-01090844
https://hal.archives-ouvertes.fr/hal-01090844
Autor:
Hans-Joachim Simon, Damien Ducatteau, Maxime Olivier, Philippe Eudeline, Francois Graux, Vincent Bridier, Gilles Dambrine
Publikováno v:
2014 International Radar Conference.
Taking advantage of a recently developed 20GHz six port mixer based nonlinear vector network analyzer (NVNA) prototype able to measure three frequencies simultaneously, the time domain tension and current waveforms are reconstructed at each chosen pu