Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Dallabora"'
Autor:
Emanuele Confalonieri, Danilo Caraccio, Marco Dallabora, Paolo Amato, Daniele Balluchi, L. Porzio
Publikováno v:
2016 Mobile System Technologies Workshop (MST).
The evolution of mobile systems from hardware and software standpoints, and their increased use in our daily life has direct implications on all the sub-systems of a smartphone. The storage sub-system, in particular, has changed deeply over the years
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b6ce3917922a6901cae97071cb922c
https://doi.org/10.1109/mst.2016.17
https://doi.org/10.1109/mst.2016.17
Publikováno v:
2015 Mobile Systems Technologies Workshop (MST).
The mobile market will continue to drive the memory industry in the up-coming years, with the highest growth for both system memory and storage. It is expected that handsets and tablets will represent more than 40% of DRAM and NANDindustry bit demand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f7a9ee352157021e3c681fe0cb21ee8
https://doi.org/10.1109/mst.2015.14
https://doi.org/10.1109/mst.2015.14
A 20 MB/s data rate 2.5 V flash memory with current-controlled field erasing for 1 M cycle endurance
Autor:
M. Dallabora, C. Villa, F.T. Caser, S. Schippers, M. Sali, G. Ortolani, A. Geraci, M. Defendi, M. Cane, L. Bettini, S. Bartoli, D. Cantarelli, R. Bez
Publikováno v:
1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.
Techniques to improve endurance and access time are applied to 2.5V high-density flash memory. A 4Mb flash product is used as a test vehicle for an erase method that extends the program/erase (P/E) endurance beyond 106 cycles. An embedded /spl mu/ROM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c109362ba4c7068fc83ff710c1a6211
https://doi.org/10.1109/isscc.1997.585456
https://doi.org/10.1109/isscc.1997.585456
Publikováno v:
2015 Mobile Systems Technologies Workshop (MST); 2015, p1-7, 7p
Publikováno v:
ESSCIRC '90: Sixteenth European Solid-State Circuits Conference; 1990, Issue 1, p161-164, 4p
Publikováno v:
IEEE Journal of Solid-State Circuits; 1988, Vol. 23 Issue 5, p1150-1156, 7p
Publikováno v:
1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e70b7d543e2bb3622979fc6fcc9bf8
https://doi.org/10.1109/isscc.1988.663662
https://doi.org/10.1109/isscc.1988.663662
Publikováno v:
IEEE Electron Device Letters; 1998, Vol. 19 Issue 2, p37-39, 3p
Autor:
Roy, Kazerounian, Irani, Prabhakar, Nguyen, Slezak, Trinh, Kauk, Agarwal, Eitan, Annunziata, Camerlenghi, Campisi, Cappelletti, Colabella, Crisenza, Dallabora, Fontana, Pividori, Tosi
Publikováno v:
1997 Symposium on VLSI Technology; 1997, p67-68, 2p
Autor:
Dallabora, M., Villa, C., Caser, F.T., Schippers, S., Sali, M., Ortolani, G., Geraci, A., Defendi, M., Cane, M., Bettini, L., Bartoli, S., Cantarelli, D., Bez, R.
Publikováno v:
1997 IEEE International Solids-State Circuits Conference Digest of Technical Papers; 1997, p396-397, 2p