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pro vyhledávání: '"Dalke, J."'
Autor:
Rittmann, C., Dalke, J., Drießen, M., Weiss, C., Schindler, F., Sorgenfrei, R., Schubert, M.C., Janz, S.
38th European Photovoltaic Solar Energy Conference and Exhibition; 198-203
In this paper, we investigate the quality of epitaxially grown, 110 μm thick, n- and p-type silicon (Si) layers deposited in a CVD batch reactor of microelectronic stand
In this paper, we investigate the quality of epitaxially grown, 110 μm thick, n- and p-type silicon (Si) layers deposited in a CVD batch reactor of microelectronic stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300eb08cb4c3651ec04a8d0d6293e8f3
The response of lifetime samples made from boron- and gallium-doped Czochralski-grown silicon from the same producer to light- and elevated temperature-induced degradation (LeTID) conditions (varying illumination at 75 °C), to dark anneals (DAs) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::808371c0246be63cb1d72acd8bc92262
https://publica.fraunhofer.de/handle/publica/267968
https://publica.fraunhofer.de/handle/publica/267968
37th European Photovoltaic Solar Energy Conference and Exhibition; 152-155
We study the degradation effects of boron-oxygen related light-induced degradation (LID) and light- and elevated temperature-induced degradation (LeTID) on both B- and Ga
We study the degradation effects of boron-oxygen related light-induced degradation (LID) and light- and elevated temperature-induced degradation (LeTID) on both B- and Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c4d21e02906150c65d81ceedef5df35
Akademický článek
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Autor:
Dalke, J.
Publikováno v:
IEEE Transactions on Magnetics; 1971, Vol. 7 Issue 3, p545-548, 4p
Autor:
Dalke, J. L.
Publikováno v:
1950 Conference on Electrical Insulation; 1950, p71-73, 3p