Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Daligou, Gerard"'
The commercially available 4000-Watt continuous-wave Erbium-doped-fiber laser, emitting at the 1567-nanometer wavelength where the atmosphere has high transmission, provides an opportunity for harvesting electric power at remote off the grid location
Externí odkaz:
http://arxiv.org/abs/2407.00049
Transferring energy without transferring mass is a powerful paradigm to address the challenges faced when the access to, or the deployment of, the infrastructure for energy conversion is locally impossible or impractical. Laser beaming holds the prom
Externí odkaz:
http://arxiv.org/abs/2405.00034
Autor:
Lemieux-Leduc, Cédric, Atalla, Mahmoud R. M., Assali, Simone, Koelling, Sebastian, Daoust, Patrick, Luo, Lu, Daligou, Gérard, Brodeur, Julien, Kéna-Cohen, Stéphane, Peter, Yves-Alain, Moutanabbir, Oussama
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using
Externí odkaz:
http://arxiv.org/abs/2402.03462
Autor:
Luo, Lu, Atalla, Mahmoud RM, Assali, Simone, Koelling, Sebastian, Daligou, Gérard, Moutanabbir, Oussama
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end, leveraging the
Externí odkaz:
http://arxiv.org/abs/2310.07833
Autor:
Atalla, Mahmoud R. M., Assali, Simone, Daligou, Gérard, Attiaoui, Anis, Koelling, Sebastian, Daoust, Patrick, Moutanabbir, Oussama
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding chall
Externí odkaz:
http://arxiv.org/abs/2310.00225
Autor:
Daligou, Gérard, Soref, Richard, Attiaoui, Anis, Hossain, Jaker, Atalla, Mahmoud R. M., Del Vecchio, Patrick, Moutanabbir, Oussama
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologie
Externí odkaz:
http://arxiv.org/abs/2302.10742
Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key fundamental prop
Externí odkaz:
http://arxiv.org/abs/2302.02467
Autor:
Attiaoui, Anis, Daligou, Gérard, Assali, Simone, Skibitzki, Oliver, Schroeder, Thomas, Moutanabbir, Oussama
The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of material sys
Externí odkaz:
http://arxiv.org/abs/2212.00758
Autor:
Luo, Lu, Assali, Simone, Atalla, Mahmoud R. M., Koelling, Sebastian, Attiaoui, Anis, Daligou, Gérard, Martí, Sara, Arbiol, J., Moutanabbir, Oussama
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxat
Externí odkaz:
http://arxiv.org/abs/2111.05994
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