Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Daley, Arthur"'
Autor:
Daley, Arthur
Publikováno v:
Baseball Digest; May/Jun2024, Vol. 83 Issue 3, p70-73, 4p, 5 Color Photographs
Autor:
Peter Almern Losee, Stephen Daley Arthur, Meng Li Wang, Greg Dunne, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Peter Deeb, James W. Kretchmer
Publikováno v:
Materials Science Forum. 858:737-740
This paper discusses SiC JTE design tradeoffs required to maximize device performance while minimizing consumed die area, fabrication cost and maintaining good reliability. Modeling and experimental results are provided.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c00a423ecd4021d98ffe4ea5da8c2d
https://doi.org/10.4028/www.scientific.net/msf.858.737
https://doi.org/10.4028/www.scientific.net/msf.858.737
Autor:
Brian Lynn Rowden, Fabio Carastro, Rajib Datta, Greg Dunne, Stephen Daley Arthur, David Alan Lilienfeld, Stacey Kennerly, Alexander Viktorovich Bolotnikov, David Richard Esler, Peter Almern Losee, Liangchun Yu, Feng Feng Tao, Maja Harfman-Todorovic, Joseph Lucian Smolenski, Ljubisa Dragoljub Stevanovic, Ravi Raju, Philip Michael Cioffi, Tobias Schuetz
Publikováno v:
Materials Science Forum. 858:894-899
This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965d85294bcfed0e1a197e260de04a8b
https://doi.org/10.4028/www.scientific.net/msf.858.894
https://doi.org/10.4028/www.scientific.net/msf.858.894
Autor:
John Byrnes, Stephen Daley Arthur, J. Jay McMahon, Bob Hillard, David Alan Lilienfeld, Thomas Bert Gorczyca, Mo Jahanbani, J. Formica, Pete Gipp, L. Shen, M. Yamagami
Publikováno v:
ECS Transactions. 69:269-276
Silicon carbide (SiC) device fabrication technology shares many similarities with Si manufacturing, but identifying whether material differences affect cleaning capability is of interest for this growing field. Material parameter differences include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8080a6ec13b2326a6152dc02b9ad3e
https://doi.org/10.1149/06908.0269ecst
https://doi.org/10.1149/06908.0269ecst
Publikováno v:
New York Times. 10/3/2024, Vol. 174 Issue 60296, pB9-B9. 1p.
Autor:
J. L. Garrett, Stephen Daley Arthur, Ahmed Elasser, Peter Almern Losee, Stanislav I. Soloviev, Zachary Stum
Publikováno v:
Materials Science Forum. :1175-1178
Bipolar degradation in 4H-SiC thyristors subjected to high current density stress is reported. The thyristor device structure, its fabrication process as well as testing conditions are described. The Electron Beam Induced Current (EBIC) technique was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ec85128aa9fa7e618ea06e440ca2e5
https://doi.org/10.4028/www.scientific.net/msf.717-720.1175
https://doi.org/10.4028/www.scientific.net/msf.717-720.1175
Autor:
Stephen Daley Arthur, Zachary Stum, Peter Almern Losee, Jeff Nasadoski, R. Ramakrishna Rao, D. Kurt Gaskill, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Charles R. Eddy, Kevin Matocha, Osama Saadeh, Rachael L. Myers-Ward
Publikováno v:
Materials Science Forum. :637-640
Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5db7ab9197e8861ad77761a73181a3c
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
Autor:
Reza Ghandi, Liangchun Yu, Liang Yin, Xingguang Zhu, Peter Micah Sandvik, Stephen Daley Arthur, Faisal Razi Ahmad, Cheng-Po Chen
Publikováno v:
IEEE Electron Device Letters. 35:1206-1208
In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from -193 °C (80 K) to 500 °C. Silicon carbide single MOSFETs remained fully operational over a 700-°C wide temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827d72cebe9a4aeb1c146f5177f27655
https://doi.org/10.1109/led.2014.2362815
https://doi.org/10.1109/led.2014.2362815
Autor:
Greg Dunne, Ahmed Elasser, Dale M. Brown, Stephen Daley Arthur, Kevin Matocha, J. L. Garrett, Peter Almern Losee, Zachary Stum, Michael Joseph Schutten
Publikováno v:
Materials Science Forum. :1053-1056
Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are attractive candidates for pulsed power applications. With a thinner blocking layer almost an order of magni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec284883c9622fb55748823d04a4d053
https://doi.org/10.4028/www.scientific.net/msf.645-648.1053
https://doi.org/10.4028/www.scientific.net/msf.645-648.1053
Autor:
Viniyak Tilak, Jesse B. Tucker, Stephen Daley Arthur, Ramakrishna Rao, Rich Beaupre, Kevin Matocha, S. Balaji
Publikováno v:
ECS Transactions. 3:367-372
In the process of developing high voltage (1500V) SiC power DIMOSFETs, both channel mobility and gate reliability were investigated. Using a MOS-gated Hall structure, the sheet carrier concentration and electron mobility were measured versus gate bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1938fe4911a8c4d53dbc0f0bdfc3760
https://doi.org/10.1149/1.2357226
https://doi.org/10.1149/1.2357226