Zobrazeno 1 - 10 of 10 pro vyhledávání: '"Daizo ICHIKAWA"'
1
Akademický článek
Building of super high-efficiency processing technology based on innovative concept (Establishment of effective polishing process of SiC substrate using Dilatancy pad tool with bowl feed method)
Autor: Toshiro K. DOI, Kiyoshi SESHIMO, Tsutomu YAMAZAKI, Masanori OHTSUBO, Hideaki NISHIZAWA, Sachi MURAKAMI, Daizo ICHIKAWA, Yoshio NAKAMURA, Tadakazu MIYASHITA, Yoshihide KAWAMURA, Masataka TAKAGI, Hiroshi KASHIWADA, Hideo AIDA
Publikováno v: Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 824, Pp 14-00618-14-00618 (2015)
In this study, we propose innovative polishing method for hard-to-process semiconductor substrate such as SiC. Our innovative polishing method mainly consists of 2 technologies. One is unprecedented polishing pad “Dilatancy pad” composed of speci
Externí odkaz: https://doaj.org/article/1a7f830e563940f191c73d0708c9a60d
Zobrazit plný text záznamu
3
Side Chain Effect on Thermochromism and Solvatochromism of End-Grafted Polysilane [Si(CH3)2SiR2]n (R = C2H5, n-C4H9, n-C6H13, n-C8H17, n-C10H21)
Autor: Keisuke Ebata, Nobuo Matsumoto, Daizo Ichikawa, Kazuaki Furukawa
Publikováno v: Macromolecules. 36:7681-7688
We synthesized a series of polysilanes −[Si(CH3)2SiR2]n− [R = C2H5, n-C4H9, n-C6H13, n-C8H17, n-C10H21] end-grafted on a quartz surface by utilizing the anionic polymerization of the corresponding source materials. We first confirmed that these s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::597d0bc6578eec5b5857a69e73a840eb
https://doi.org/10.1021/ma034535z
Zobrazit plný text záznamu
4
Proposal and development of a novel high-speed/high-pressure polishing machine aiming at the super high efficiency process of the hard-to-process substrates
Autor: Daizo Ichikawa, Kiyoshi Seshimo, Tsutomu Yamazaki, Toshiro Doi, Tadakazu Miyashita, Masanori Ohtsubo
Publikováno v: Proceedings of International Conference on Planarization/CMP Technology 2014.
In recent years, wide band gap semiconductors, such as SiC and GaN, are attracting extensive attention as an alternative material of Si semiconductors. However, issues such as reduction of the production cost and improvement of the productivity preve
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c23d9ad5840b9e8b584cc821d39fd42
https://doi.org/10.1109/icpt.2014.7017296
Zobrazit plný text záznamu
9
Evaluation of In-Plane Microdeformation Distribution Characteristics of Polishing Pad Surface
Autor: Ken-ichi Ishikawa, Kazutaka Shibuya, Yoshio Nakamura, Michio Uneda, Tatsunori Omote, Daizo Ichikawa
Publikováno v: Japanese Journal of Applied Physics. 52:05FC01
In the chemical mechanical polishing (CMP) of a Si wafer, the physical properties of the polishing pad affect the processing characteristics. There have been several studies on the evaluation of pad surface asperity. In this study, we investigate the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46ff05cac1186d33477c29fe61f3d137
https://doi.org/10.7567/jjap.52.05fc01
Zobrazit plný text záznamu
10
Impact of Gaseous Additives on Copper CMP in Neutral and Alkaline Solutions Using a CAP System
Autor: Daizo Ichikawa, Brent Hiskey, Koichiro Ichikawa, Toshiro Doi, Darren DeNardis, Ara Philipossian
Publikováno v: Journal of The Electrochemical Society. 152:G824
A controlled atmosphere polishing (CAP) system was used to determine the effects of various chamber gases on copper chemical mechanical polishing (CMP) in the presence and absence of NH 4 OH and H 2 O 2 . Using 500 kPa oxygen or nitrogen has only sli
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c5c5589463c9130b794268bf965bf3e
https://doi.org/10.1149/1.2042908
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje