Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Daisuke Shimokawa"'
Publikováno v:
Membranes, Vol 13, Iss 2, p 168 (2023)
Plasmid DNA is used as a vector for gene therapy and DNA vaccination; therefore, the establishment of a mass production method is required. Membrane filtration is widely employed as a separation method suitable for the mass production of plasmid DNA.
Externí odkaz:
https://doaj.org/article/3667c3e966754fa5ab7ecece1c3e96df
Autor:
Takayoshi Shimura, Takuji Hosoi, Daisuke Shimokawa, Heiji Watanabe, T. Matsumiya, Satoshi Iida, Morimoto Naoki, Atsushi Ogura
Publikováno v:
Current Applied Physics. 12:S69-S74
We investigated the crystalline quality of supercritical-thickness strained silicon-on-insulator (SC-sSOI) wafers by synchrotron X-ray topography and its correlation with electrical characteristics by use of back-gate transistors. Several types of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f19f00148971b241f73e1049ccc221
https://doi.org/10.1016/j.cap.2012.04.020
https://doi.org/10.1016/j.cap.2012.04.020
Autor:
Tomoyuki Inoue, Takayoshi Shimura, Takuji Hosoi, Daisuke Shimokawa, Yuki Okamoto, Heiji Watanabe
Publikováno v:
ECS Transactions. 33:893-899
The oxidation of SiGe alloys has been investigated for both fundamental and technological reasons, as has Si oxidation. It has been expected as the fabrication process for the gate oxide of SiGe channel metal-oxide field-effect transistors (MOSFETs),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::881f68726db07faa5b383380693448c7
https://doi.org/10.1149/1.3487620
https://doi.org/10.1149/1.3487620
Autor:
Takuji Hosoi, Masataka Umeno, Yuki Okamoto, Daisuke Shimokawa, Osami Sakata, Heiji Watanabe, Tomoyuki Inoue, Takayoshi Shimura
Publikováno v:
ECS Transactions. 19:479-493
Thermal stability and the electron irradiation damage to the ordered structure in the thermal oxide on Si substrates are shown, together with the fundamentals of the quasi-amorphous structural model. The mechanism and rate enhancement of SiGe oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf5f1b018a42ca2c98a3d763efc1d4a
https://doi.org/10.1149/1.3122111
https://doi.org/10.1149/1.3122111
Autor:
Yasuhiko Imai, Shigeru Kimura, Osami Sakata, Tomoyuki Inoue, Takayoshi Shimura, Daisuke Shimokawa, Takuji Hosoi, Heiji Watanabe
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a8d42b5751603ac0a24b52324f7cec
https://doi.org/10.7567/ssdm.2008.p-1-21l
https://doi.org/10.7567/ssdm.2008.p-1-21l
Autor:
Tomoyuki Inoue, Osami Sakata, Daisuke Shimokawa, Takuji Hosoi, Heiji Watanabe, Shigeru Kimura, Takayoshi Shimura, Yasuhiko Imai
Publikováno v:
Japanese Journal of Applied Physics. 50:010112
We fabricated a Ge-on-insulator (GOI) structure by the Ge condensation method and characterized the SiGe layer during the condensation process by X-ray reciprocal space mapping and synchrotron microbeam X-ray diffraction. The crystalline quality of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46cfdedcfdb39ed6002cb3bc72a15e1a
https://doi.org/10.7567/jjap.50.010112
https://doi.org/10.7567/jjap.50.010112
Autor:
Osami Sakata, Takayoshi Shimura, Daisuke Shimokawa, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe, Masataka Umeno
Publikováno v:
Journal of The Electrochemical Society. 157:H977
We investigated the thermal stability and the electron irradiation damage of the ordered structure in the thermal oxide layer on Si substrates. The diffraction peak from the ordered SiO 2 shifted to the lower angle side, and the intensity decreased a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a0c1ce62cc1810083a845a13fa2371a
https://doi.org/10.1149/1.3476310
https://doi.org/10.1149/1.3476310
Autor:
Takayoshi Shimura, Yuki Okamoto, Daisuke Shimokawa, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe
Publikováno v:
ECS Meeting Abstracts. :817-817
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febfca92204117965053326865ce6a23
https://doi.org/10.1149/ma2009-01/19/817
https://doi.org/10.1149/ma2009-01/19/817