Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Daisuke Ohori"'
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Micro-light-emitting diode displays are generating considerable interest as a promising technology for augmented-reality glasses. However, the fabrication of highly efficient and ultra-small (
Externí odkaz:
https://doaj.org/article/81f815f9c8ba4634a5836956ee372077
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 150-155 (2023)
This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral bea
Externí odkaz:
https://doaj.org/article/69f5156fb1d54242aa24bef6c3c52073
Publikováno v:
Nanomaterials, Vol 14, Iss 1, p 95 (2023)
Commercially available formulations of the popular conductive polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) are aqueous dispersions that require the addition of secondary dopants such as dimethyl sulphoxide (DMSO) or eth
Externí odkaz:
https://doaj.org/article/da41a841ca234fafb4069b3e89ef5ca1
Autor:
Aditya Saha, Ryuji Oshima, Daisuke Ohori, Takahiko Sasaki, Hirokazu Yano, Hidenori Okuzaki, Takashi Tokumasu, Kazuhiko Endo, Seiji Samukawa
Publikováno v:
Energies, Vol 16, Iss 19, p 6900 (2023)
PEDOT:PSS/Si hybrid photovoltaic cells have been attracting attention as a potential way to simplify the manufacturing process and democratize solar energy production. Control of the PEDOT/Si interface is also one of the primary ways to ensure the im
Externí odkaz:
https://doaj.org/article/2aee3b259cf845cb8df9e8f8f61606d6
Autor:
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 26-30 (2021)
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were
Externí odkaz:
https://doaj.org/article/85dd0664586d42f58c58f3a223a22441
Autor:
Daisuke Ohori, Min-Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming-Yi Lee, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 148-152 (2021)
The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe com
Externí odkaz:
https://doaj.org/article/6408b68c71fe4ef7b9dd8465f556e0b3
Autor:
Daisuke Ohori, Sou Takeuchi, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn-Hwan Tarng, Kazuhiko Endo, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 1, Pp 1-5 (2020)
We fabricated a highly water-repellent quartz nanopillar (NP) structure to investigate the effect of varying the contact angle (CA) by using 10-nm-order gaps and 10-nm-diameter NPs. Gaps from 15 to 30 nm led to CAs of more than 100°, showing hydroph
Externí odkaz:
https://doaj.org/article/1ebf360478e9465a8ddd64c84cfbc2e9
Autor:
Roman Anufriev, Daisuke Ohori, Yunhui Wu, Ryoto Yanagisawa, Laurent Jalabert, Seiji Samukawa, Masahiro Nomura
Publikováno v:
Nanoscale. 15:2248-2253
Silicon nanopillars are shown to produce local resonances in phonon dispersion but have negligible impact on the thermal conductivity of silicon membranes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0490d832e6bafb0ea760bcdbec74dc0e
https://doi.org/10.1039/d2nr06266f
https://doi.org/10.1039/d2nr06266f
Hydrogen Iodide (HI) Neutral Beam Etching Characteristics of InGaN and GaN for Micro-LED Fabrication
Autor:
Daisuke Ohori, Takahiro Ishihara, Xuelun Wang, Kazuhiko Endo, Tsou-Hwa Hsieh, Yiming Li, Nobuhiro Natori, Kazuma Matsui, Seiji Samukawa
Publikováno v:
Nanotechnology.
We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2 NBE. We showed the advantages of HI NBE vs Cl2 NBE, namely: higher InGaN etch rate, better surface smoothness, and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4763837d0cae0cb93bc7bb534a81642
https://doi.org/10.1088/1361-6528/acd856
https://doi.org/10.1088/1361-6528/acd856
Publikováno v:
Journal of Applied Physics. 133:125703
Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise cau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f57e753e0baa3b8812d12aabe75ab17b
https://doi.org/10.1063/5.0146578
https://doi.org/10.1063/5.0146578