Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Daisuke Muto"'
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 85, Iss 879, Pp 19-00252-19-00252 (2019)
Operational transfer path analysis is important in considering the countermeasure structure of the operating actual product for noise and vibration problems. But in the conventional method based on the least square method has some problems such as th
Externí odkaz:
https://doaj.org/article/d45db19e4f4b42d78d79abb1ad243ef3
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 83, Iss 855, Pp 17-00106-17-00106 (2017)
To increase the noise proof performance of a cover with aperture excited by diffuse acoustic fields from the outside, it is a problem to prevent the occurrence of the inner acoustic mode at the lower frequencies. Authors had suggested the feed forwar
Externí odkaz:
https://doaj.org/article/49933cf9b2d24f65a98fa1baa065be4a
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 827, Pp 15-00120-15-00120 (2015)
To improve the noise proof performance of a cover with apertures, the occurrence of the inner acoustic mode at lower frequencies must be prevented. To do this, the authors propose an interference wave inducing aperture. To overcome the noise propagat
Externí odkaz:
https://doaj.org/article/33a1e37b56d84354ae116f930dcd20b2
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 822, Pp 14-00483-14-00483 (2015)
To identify the optimum structure of noise-proof cover with apertures, the insertion loss of three noise-insulating-absorbing-structures ("bare single plate", "absorber inserted double plate", "single plate with inside absorption") are calculated by
Externí odkaz:
https://doaj.org/article/2ccbd0a9b4ca49dbabd050e8b9c9d20d
Publikováno v:
Mechanical Engineering Journal, Vol 1, Iss 5, Pp DR0052-DR0052 (2014)
To prevent noise generated by devices such as compressors, generators, or motors, a noise-proof cover is usually installed around them. It is also installed to protect ultra precise devices from ambient noise. Because of space considerations, the noi
Externí odkaz:
https://doaj.org/article/86e9aba94dac43c0930bbad83e17fadd
Autor:
Keiichi Tomizawa, Daisuke Muto, Masayuki Hikita, Kenta Maeda, Keisuke Ikeda, Hideo Fukuda, Masahiro Kozako, Tomohiro Kubo
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 139:161-166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1769ddf2bd52ce85cb4bcc07b8b111
https://doi.org/10.1541/ieejfms.139.161
https://doi.org/10.1541/ieejfms.139.161
Autor:
Daisuke Muto, Kenta Maeda, Hideo Fukuda, Keisuke Ikeda, Masayuki Hikita, Keiichi Tomizawa, Masahiro Kozako, Tomohiro Kubo
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 139:167-173
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c226304d621647a4f484026e616377
https://doi.org/10.1541/ieejfms.139.167
https://doi.org/10.1541/ieejfms.139.167
Autor:
Tomoko Kondo, Hirokazu Kurahashi, Akihisa Okumura, Tatenobu Goto, Satoru Takeshita, Yasumasa Yamada, Daisuke Muto, Hiroko Ueda, Hiroki Kakita, Michihiko Takasu
Publikováno v:
Journal of Neonatal-Perinatal Medicine. 11:191-194
We present here a late preterm infant with extensive brain lesions resulting from vitamin K deficiency. A female infant was born after 35 weeks of gestation by emergent cesarean section because of non-reassuring fetal status. Her mother had severe ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa423aa5c0a2d2c8b821e2d3387a9d8
https://doi.org/10.3233/npm-181745
https://doi.org/10.3233/npm-181745
Publikováno v:
Materials Science Forum. 897:75-78
We investigated the carrot-defect reduction effect by optimizing the buffer layers of 4H-Silion Carbide (SiC) epitaxial wafers. The SiC epitaxial wafer with the 0.5 μm-thick optimized condition-B buffer layer show the carrot-defect density of 0.13 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6bed9f3a2e2ab248f75edab63200977
https://doi.org/10.4028/www.scientific.net/msf.897.75
https://doi.org/10.4028/www.scientific.net/msf.897.75
Autor:
Hitoshi Osawa, Akira Miyasaka, Kenji Momose, Jun Norimatsu, Daisuke Muto, Yutaka Tajima, Masuda Tatsuya
Publikováno v:
Materials Science Forum. 858:201-204
For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08359e5f1bbb1dfa564367128fbcfff
https://doi.org/10.4028/www.scientific.net/msf.858.201
https://doi.org/10.4028/www.scientific.net/msf.858.201