Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Daisuke Inahara"'
Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field Effect Transistors
Autor:
Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Satoshi Kurai, Narihito Okada, Yoichi Yamada
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e44c4fde0ba93d0e8b085a9d601bc44
https://doi.org/10.1002/pssa.202200871
https://doi.org/10.1002/pssa.202200871
Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor
Autor:
Lu You, Wataru Matsumura, Kazuya Ataka, Shunsuke Matsuda, Daisuke Inahara, Koki Hanasaku, Ryo Okuno, Taketo Kowaki, Yongzhao Yao, Yukari Ishikawa, Satoshi Kurai, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1018
This study proposes a nitrogen-polar (N-polar) Al x Ga1−x N/Al0.9Ga0.1N/AlN structure that can generate a large amount of two-dimensional electron gas to enhance the device development of samples. Additionally, we have analyzed the critical thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e98abb4a35ec1b7dcf36f7b1113eff
https://doi.org/10.35848/1347-4065/ac9532
https://doi.org/10.35848/1347-4065/ac9532