Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Daisuke Hironiwa"'
Publikováno v:
Journal of The Japan Institute of Electronics Packaging. 24:536-540
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a1073e32e51cc5137d2266fb9ce28b
https://doi.org/10.5104/jiep.24.536
https://doi.org/10.5104/jiep.24.536
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41262f5e021e2e4d1299c321a43aa66d
https://doi.org/10.1109/ectc51906.2022.00308
https://doi.org/10.1109/ectc51906.2022.00308
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b663e872bfb72ed9e4d2bf2fc06097
https://doi.org/10.1109/ectc51906.2022.00141
https://doi.org/10.1109/ectc51906.2022.00141
Autor:
Kazumasa Horita, Tsuyoshi Kagami, Ryuichiro Kamimura, Daisuke Hironiwa, Yasuhiro Morikawa, Takashi Kurimoto
Publikováno v:
2021 International Conference on Electronics Packaging (ICEP).
Advanced packaging is required to have higher performance, smaller size, and lower energy consumption, thus a widely variety of materials have been used and the writing layer becomes denser. In this background, it is expected that it would be necessa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3280d833f3bdba9e89916db65b37e594
https://doi.org/10.23919/icep51988.2021.9451951
https://doi.org/10.23919/icep51988.2021.9451951
Autor:
Yao-Chih Hsieh, Ryuichiro Kamimura, Chao Zuo, Taichi Suzuki, Yasuhiro Morikawa, Daisuke Hironiwa
Publikováno v:
2020 21st International Conference on Electronic Packaging Technology (ICEPT).
Currently, the miniaturization technology of wiring in Fan-Out Wafer Level Packaging (FO-WLP) is needful to multi chip module system fabrication using the re-distribution layer (RDL) wiring technologies. In addition, Fan-Out Package on Package (FO-Po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b44fe160136f5fa24280c68516fde4
https://doi.org/10.1109/icept50128.2020.9202525
https://doi.org/10.1109/icept50128.2020.9202525
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
In the last years the number of high performance mobile devices, such as smart phones or tablet PCs, increases widely and accordingly data traffic augments rapidly. Devices for these equipment require high-rate processing capabilities, high-density p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29c5a359895856f911ab4a1c220288b5
https://doi.org/10.1109/ectc32862.2020.00147
https://doi.org/10.1109/ectc32862.2020.00147
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:990-1000
Cu(In,Ga)Se2 (CIGS) films on soda-lime glass and stainless steel (SUS) substrates with several [Ga]/([Ga] + [In]), GGI, and Fe concentrations are fabricated by so-called “multi-layer precursor method”. From optical deep-level transient spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ccbc46098a81cfac0da6caeb69cfa7
https://doi.org/10.1002/pip.2748
https://doi.org/10.1002/pip.2748
Autor:
Takashi Minemoto, Hikaru Uegaki, Daisuke Hironiwa, Kenta Aoyagi, Yuki Nukui, Jakapan Chatana, Kiichi Kosaka, Zeguo Tang
Publikováno v:
Solar Energy Materials and Solar Cells. 143:311-318
Reaction path for fabrication of Cu 2 SnSe 3 (CTSe) film by selenization of Cu–Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae7542cd14311a0be62fb28081d96a0
https://doi.org/10.1016/j.solmat.2015.07.025
https://doi.org/10.1016/j.solmat.2015.07.025
Autor:
Hiroki Sugimoto, Takuya Kato, Daisuke Hironiwa, Jakapan Chantana, Ryo Takai, Takashi Minemoto, Noriyuki Sakai
Publikováno v:
Applied Surface Science. 353:209-213
The efficiency of Cu 2 ZnSn(S x ,Se 1− x ) 4 (CZTSSe) solar cells is significantly lower than that of other solar cells such as Cu(In,Ga)Se 2 solar cells. This is because the open circuit voltage ( V oc ) of CZTSSe solar cells is significantly low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f986a49eb872bcac79b23bf2976a2f
https://doi.org/10.1016/j.apsusc.2015.06.120
https://doi.org/10.1016/j.apsusc.2015.06.120
Autor:
Daisuke Hironiwa, Noriyuki Sakai, Takashi Minemoto, Nobuki Matsuo, Jakapan Chantana, Hiroki Sugimoto, Takuya Kato
Publikováno v:
physica status solidi (a). 212:2766-2771
(Zn,Mg)O buffer layer has attracted attention with the potential to control the conduction-band offset (CBO) at the interface between the buffer layer and the Cu2ZnSn(S,Se)4 (CZTSSe) absorber, where the (Zn,Mg)O buffer layer is deposited by sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f06ed74a29f8ad37de2e6a63239373
https://doi.org/10.1002/pssa.201532217
https://doi.org/10.1002/pssa.201532217