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Etch characteristics of nanoscale ultra low-k dielectric using C3H2F6

Autor: Doo San Kim, Jun Ki Jang, Dain Sung, Hyun Woo Tak, Dongwoo Kim, Geun Young Yeom

Publikováno v: Materials Express. 10:834-840

Next generation semiconductor devices require ultra low dielectric constant (ULK) materials such as porous SiCOH on the back end of line structure for lower resistance and capacitance (RC) time delay, however, these ULK materials are easily damaged b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a7c390a50c6257020ad64fa7f11d7b0
https://doi.org/10.1166/mex.2020.1777

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Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Autor: Dain Sung, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, Geunyoung Yeom

Publikováno v: Materials; Volume 15; Issue 4; Pages: 1300

The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56482605f6c55222aaf6b31e4deb14ce

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Investigation of SiO

Autor: Dain, Sung, Long, Wen, Hyunwoo, Tak, Hyejoo, Lee, Dongwoo, Kim, Geunyoung, Yeom

Publikováno v: Materials (Basel, Switzerland). 15(4)

The etching properties of C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::1668ca2b059e00a3e7cc9af94b81f4f0
https://pubmed.ncbi.nlm.nih.gov/35207841

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Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide

Autor: Hyun Woo Tak, Hye Joo Lee, Long Wen, Byung Jin Kang, Dain Sung, Jeong Woon Bae, Dong Woo Kim, Wonseok Lee, Seung Bae Lee, Keunsuk Kim, Byeong Ok Cho, Young Lea Kim, Han Dock Song, Geun Young Yeom

Publikováno v: Applied Surface Science. 600:154050

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61881d1dceeee0023caa246e84719760
https://doi.org/10.1016/j.apsusc.2022.154050

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Study on plasma characteristics and gas analysis before and after recovery using liquid-fluorocarbon precursor

Autor: Byoungmoon Oh, Geun Young Yeom, Dain Sung, Kyongnam Kim, Junyoung Park

Publikováno v: Applied Surface Science. 532:147358

Perfluorocarbon (PFC) gas is a representative greenhouse gas with high global warming potential (GWP) and is mainly used in the etching processes applicable to the manufacture of semiconductor devices. High capacity and high integration have been ach

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71b1617c6e9e9e213d2c14e11989f59c
https://doi.org/10.1016/j.apsusc.2020.147358

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Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

Autor: Seungwon Song, Jong Sik Oh, Geun Young Yeom, Soonmin Yim, Dain Sung, Ji-Soo Oh

Publikováno v: SPIE Proceedings.

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS- b -PDMS), which is used as an alternative patterning method for va

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6e5a5839bb80105c489c69bb83e39f4
https://doi.org/10.1117/12.2258147

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