Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Daimotsu Kato"'
Autor:
Matthew Smith, Yosuke Kajiwara, Hiroshi Ono, Po-Chin Huang, Daimotsu Kato, Akira Mukai, Aya Shindome, Masahiko Kuraguchi
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e837f8363a9cc63a7e740db63e30a1
https://doi.org/10.1109/wipda49284.2021.9645147
https://doi.org/10.1109/wipda49284.2021.9645147
Publikováno v:
Agents and Multi-Agent Systems: Technologies and Applications 2021 ISBN: 9789811629938
KES-AMSTA
KES-AMSTA
Automated Guided Vehicles (AGVs) are used in a flexible job shop production system. In this type of production system, proper scheduling of tasks is the most important issue. This issue is considered to be non-deterministic polynomial time-hard and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad1bda4ab38a0925c0ba889527ae033
https://doi.org/10.1007/978-981-16-2994-5_43
https://doi.org/10.1007/978-981-16-2994-5_43
Autor:
Aya Shindome, Toshiki Hikosaka, A. Mukai, Shinya Nunoue, Daimotsu Kato, Masahiko Kuraguchi, Hiroshi Ono, Yosuke Kajiwara
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The channel mobility and positive bias temperature instability is improved by the additional two processes of the gate structures in recessed normally-off GaN-MOSFETs. The one is the surface treatment for removal of the damage by the recess etching.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0068bfb27c50f2fc9688aae33feac869
https://doi.org/10.1109/iciprm.2019.8819114
https://doi.org/10.1109/iciprm.2019.8819114
Autor:
Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Shinya Nunoue, Masahiko Kuraguchi, Jumpei Tajima, Aya Shindome, Toshiki Hikosaka, Daimotsu Kato
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGD13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107920eef68e679dcdbc81467a21d0ce
https://doi.org/10.35848/1347-4065/ab6b7f
https://doi.org/10.35848/1347-4065/ab6b7f
Autor:
Daimotsu Kato, Hiroshi Ono, Kenjiro Uesugi, Shimizu Tatsuo, Masahiko Kuraguchi, Y. Nishida, Aya Shindome, A. Mukai, Toshiya Yonehara, Akira Yoshioka, Yosuke Kajiwara
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Threshold voltage shift of GaN MOSFET in positive bias temperature instability test was drastically suppressed by reducing certain impurity densities in SiO 2 gate dielectric. An analysis to estimate the charge trap level showed electron traps in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64dfc051ee0c67d2a5dcdcd3f3a0305
https://doi.org/10.1109/iedm.2017.8268490
https://doi.org/10.1109/iedm.2017.8268490
Autor:
Daimotsu Kato, Keiji Sugi, Tomoaki Sawabe, Tomio Ono, Hayato Kakizoe, Yutaka Nakai, Tomoko Sugizaki, Akio Amano, Yasushi Shinjo
Publikováno v:
SID Symposium Digest of Technical Papers. 46:790-793
We propose a new technique to fabricate a transmissive one-side-emission OLED panel with alignment-free cathode patterning. This technique can reduce the non-luminescent and non-transparent area and result in the enlargement of luminescent area. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73623f57cc29fac8802ddad82c655cb6
https://doi.org/10.1002/sdtp.10307
https://doi.org/10.1002/sdtp.10307
Autor:
Aya Shindome, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi, Toshiya Yonehara, Shinya Nunoue, Daimotsu Kato, H. Saito, Akira Yoshioka
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07fa69739b09ef7d78f3b66950aa80c
https://doi.org/10.7567/ssdm.2017.n-5-02
https://doi.org/10.7567/ssdm.2017.n-5-02
Autor:
Tomio Ono, Tomoko Sugizaki, Keiji Sugi, Daimotsu Kato, Isao Amemiya, Akio Amano, Tomoaki Sawabe, Hayato Kakizoe, Shintaro Enomoto, Yasushi Shinjo
Publikováno v:
SID Symposium Digest of Technical Papers. 44:689-692
We fabricated a transmissive one-side-emission organic light emitting diode (OLED) based on a stripe-shaped cathode. The fabricated transmissive OLED whose panel size is 180 × 90 mm2 showed high transmittance of 68% with the luminance ratio of the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530fc1852e0adb0cef78922e97d37d9b
https://doi.org/10.1002/j.2168-0159.2013.tb06306.x
https://doi.org/10.1002/j.2168-0159.2013.tb06306.x
Autor:
Aya Shindome, Toshiya Yonehara, Toshiki Hikosaka, Daimotsu Kato, Shinya Nunoue, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi
Publikováno v:
physica status solidi (a). 215:1700511
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::210134930b31c78283b1565edf804964
https://doi.org/10.1002/pssa.201700511
https://doi.org/10.1002/pssa.201700511
Autor:
Shintaro Enomoto, Toshiya Yonehara, Keiji Sugi, Tomio Ono, Isao Amemiya, Tomoaki Sawabe, Daimotsu Kato
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1548-1550
A 70 mm × 80 mm OLED lighting panel with efficacy of 78.6 lm/W at 1000 cd/m2 has been demonstrated. We improved the efficacy of the panel by decreasing driving voltage. We adopted two approaches: optimize device structure by using high-mobility elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa7302710e5e9044ff9d83071cf81c3
https://doi.org/10.1002/j.2168-0159.2012.tb06111.x
https://doi.org/10.1002/j.2168-0159.2012.tb06111.x