Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Daiki Wakimoto"'
Autor:
Daiki Wakimoto, Chia-Hung Lin, Quang Tu Thieu, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata
Publikováno v:
Applied Physics Express. 16:036503
We demonstrate high-performance normally-off multi-fin β-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 μm by using a nitrogen-doped β-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e37560c76448e7689fd913c0f4dacbb
https://doi.org/10.35848/1882-0786/acc30e
https://doi.org/10.35848/1882-0786/acc30e
Autor:
Yongzhao Yao, Daiki Wakimoto, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata, Keiichi Hirano, Yoshihiro Sugawara, Yukari Ishikawa
Publikováno v:
Scripta Materialia. 226:115216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62533ff9b29b7ef11b82db47edbde695
https://doi.org/10.1016/j.scriptamat.2022.115216
https://doi.org/10.1016/j.scriptamat.2022.115216
Autor:
Akito Kuramata, Kelson D. Chabak, Antonio Crespo, Nolan S. Hendricks, Robert C. Fitch, Krishnamurthy Mahalingam, Kevin D. Leedy, Andrew J. Green, Jonathan McCandless, Kohei Sasaki, Neil Moser, Daiki Wakimoto, Stephen E. Tetlak, Brandon M. Howe, Gregg H. Jessen
Publikováno v:
IEEE Electron Device Letters. 39:67-70
We report enhancement-mode $\beta $ -Ga2O3 (BGO) MOSFETs on a Si-doped homoepitaxial channel grown by molecular beam epitaxy. A gate recess process is used to partially remove the epitaxial channel under the 1- $\mu \text{m}$ gated region to fully de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9acc35bbadaee3641f3993c645a47e5
https://doi.org/10.1109/led.2017.2779867
https://doi.org/10.1109/led.2017.2779867
Autor:
Andrew D. Koehler, Marko J. Tadjer, Akito Kuramata, Daiki Wakimoto, Michael A. Mastro, Alyssa L. Mock, James C. Gallagher, Alan G. Jacobs, Mona A. Ebrish, Karl D. Hobart, Kohei Sasaki, Travis J. Anderson
Publikováno v:
Journal of Vacuum Science & Technology A. 39:033402
Heterojunction field-effect transistors based on the β-(AlxGa1−x)2O3/Ga2O3 heterostructure grown by ozone-assisted molecular beam epitaxy were demonstrated for the first time. Al composition ratios in the 14%–23% range were validated using x-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b7413f839b7402df46cb492e43a28d
https://doi.org/10.1116/6.0000932
https://doi.org/10.1116/6.0000932
Autor:
Shigenobu Yamakoshi, Kohei Sasaki, Daiki Wakimoto, Yuki Koishikawa, Masataka Higashiwaki, Akito Kuramata, Quang Tu Thieu
Publikováno v:
IEEE Electron Device Letters. 38:783-785
We developed $\beta $ -Ga2O3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Si-doped Ga2O3 layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped $\beta $ -Ga2O3 (001) substrate. The trench structure was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16abbde289c4ceb267be91ce82f7c47b
https://doi.org/10.1109/led.2017.2696986
https://doi.org/10.1109/led.2017.2696986
Publikováno v:
Applied Physics Letters. 116:092101
Surface states on (001) oriented halide vapor phase epitaxy (HVPE) grown β-Ga2O3 epilayers were explored through the determination of the Schottky barrier height (SBH) as a function of the metal work function using Cr, Cu, Ni, and Au Schottky barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb778957ad9cef8b5379f8b8af2a8966
https://doi.org/10.1063/1.5142246
https://doi.org/10.1063/1.5142246
Autor:
Shigenobu Yamakoshi, Jun Hirabayashi, Daiki Wakimoto, Yuki Koishikawa, Yoshiaki Fukumitsu, Inokuchi Daisuke, Akio Takatsuka, Quang Tu Thieu, Jun Arima, Akito Kuramata, Kohei Sasaki
Publikováno v:
DRC
Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48a04ea65dab9c04dae6b38dfa9de52
https://doi.org/10.1109/drc.2018.8442267
https://doi.org/10.1109/drc.2018.8442267
Autor:
Akito Kuramata, Masataka Higashiwaki, S. Yamakoshi, Yuki Koishikawa, Quang Tu Thieu, Daiki Wakimoto, Kohei Sasaki
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
β-Ga 2 O 3 is a suitable material for next-generation high-power devices because it has excellent material properties and mass productivity. In the past, we have demonstrated field-plated Ga 2 O 3 Schottky barrier diodes (SBDs) with nearly ideal rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185882bcb874ec56d5353888ca95a182
https://doi.org/10.1109/drc.2017.7999399
https://doi.org/10.1109/drc.2017.7999399
Autor:
Matty C. Specht, Ken Goto, Travis J. Anderson, Kohei Sasaki, Marko J. Tadjer, Karl D. Hobart, Quang T. Thieu, Shinya Watanabe, Daiki Wakimoto, Akito Kuramata, Fritz J. Kub, Evan R. Glaser, Jaime A. FreitasJr., James C. Gallagher, Andrew D. Koehler
Publikováno v:
Applied Physics Letters. 113:192102
Semi-insulating halide vapor phase epitaxial β-Ga2O3 films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98924c5d4aa3ad18325aa5e481503279
https://doi.org/10.1063/1.5045601
https://doi.org/10.1063/1.5045601
Autor:
Kohei Sasaki, Yuki Koishikawa, Shigenobu Yamakoshi, Akito Kuramata, Daiki Wakimoto, Quang Tu Thieu
Publikováno v:
Applied Physics Express. 10:124201
We developed depletion-mode vertical Ga2O3 trench metal–oxide–semiconductor field-effect transistors by using n+ contact and n− drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfad7c78e8adab9a0b710e57a92e69c2
https://doi.org/10.7567/apex.10.124201
https://doi.org/10.7567/apex.10.124201