Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Daiji Yamashita"'
Autor:
Toshihiko Fujimori, Daiji Yamashita, Yoshiya Kishibe, Momoko Sakai, Hirotaka Inoue, Takamasa Onoki, Jun Otsuka, Daisuke Tanioka, Takeshi Hikata, Soichiro Okubo, Keishi Akada, Jun-ichi Fujita
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract We report the one-step fabrication of aligned and high-quality carbon nanotubes (CNTs) using floating-catalyst chemical vapor deposition (FCCVD) with controlled fluidic properties assisted by a gas rectifier. The gas rectifier consists of on
Externí odkaz:
https://doaj.org/article/dba51d1b4db84493a727045be7a34bc9
Autor:
Daiji Yamashita, Shun Takahashi, Ryota Tanomura, Kento Komatsu, Yoshiaki Nakano, Takuo Tanemura, Taichiro Fukui
Optical phased arrays (OPAs) are promising beam-steering devices for various applications such as light detection and ranging, optical projection, free-space optical communication, and optical switching. However, previously reported OPAs suffer from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64092f2258095cbd81bb8b419acabda0
Autor:
Taichiro Fukui, Ryota Tanomura, Kento Komatsu, Daiji Yamashita, Shun Takahashi, Yoshiaki Nakano, Takuo Tanemura
Publikováno v:
Optica. 9:159
This erratum corrects the error in Fig. 5 of our earlier paper [Optica 8, 1350 (2021)OPTIC82334-253610.1364/OPTICA.437453].
Autor:
Takamasa ONOKI, Toshihiko FUJIMORI, Hirotaka INOUE, Daiji YAMASHITA, Daisuke TANIOKA, Takeshi HIKATA, Soichiro OKUBO
Publikováno v:
The Proceedings of the Materials and Mechanics Conference. 2022:OS15L1
Autor:
Kento Komatsu, Saeed M. Alhassan, Yuan-Qing Li, Lianxi Zheng, Daiji Yamashita, Yoshiaki Nakano, Yarjan Abdul Samad, Kin Liao
Publikováno v:
Sensors and Actuators B: Chemical. 240:1083-1090
Some of the most advanced laptop computers have their trackpads made to detect both force and position precisely. These trackpads are made of intricately designed force sensors, taptic engines and capacitive glass surfaces. In this study, we have mod
Autor:
Manabe Atsushi, Masakazu Sugiyama, Yoshiyasu Nakashima, Yu Yonezawa, Hideki Takauchi, Daiji Yamashita, Hiroji Ebe, Yasuyuki Ota, Hiroshi Nakao, Kensuke Nishioka
Publikováno v:
2018 7th International Conference on Renewable Energy Research and Applications (ICRERA).
The model-based development (MBD) technology is applied to design and implement a solar-to-hydrogen (STH) conversion system. Concentrator photovoltaic (CPV) modules, electrolyzers, and DC-DC converters are modeled precisely based on the actual compon
Autor:
Kentaroh Watanabe, Erina Nagaoka, Masakazu Sugiyama, Kasidit Toprasertpong, Daiji Yamashita, Yoshiaki Nakano
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surfac
Autor:
Yu Yonezawa, Inagaki Makoto, Masakazu Sugiyama, Hiroji Ebe, Yasuyuki Ota, Kensuke Nishioka, Rui Mikami, Iwasaki Takashi, Hiroshi Nakao, Daiji Yamashita, Yoshiyasu Nakashima, Yoshiya Abiko
Publikováno v:
Applied Physics Express. 11:077101
Using an optimized system comprising concentrator photovoltaic (CPV) modules, electrolyzers, and DC/DC converters for dynamic control, we achieved a one-day solar-to-hydrogen (STH) efficiency of 18.78% — the highest value for a sub-kilowatt-scale p
Autor:
Daiji Yamashita, Masakazu Sugiyama, Kentaroh Watanabe, Genki Kono, Masahisa Fujino, Yoshiaki Nakano, Tadatomo Suga
Publikováno v:
2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC).
Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I–V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were
Autor:
Masakazu Sugiyama, Kentaroh Watanabe, Daiji Yamashita, Masahisa Fujino, Yoshiaki Nakano, Genki Kono, Tadatomo Suga
Publikováno v:
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properti