Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Daiji Fukushi"'
Autor:
Masakazu Aono, Ayumi Ogawa, Mayumi Kasuga, Yasuhiro Mazaki, Daiji Fukushi, Hiroyuki Ozaki, Takao Tsuchiya, Tomohide Takami, M. Uda
Publikováno v:
Angewandte Chemie. 109:2909-2912
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3440f500bf5de72b5d93c0bfcc9b461b
https://doi.org/10.1002/ange.19971092427
https://doi.org/10.1002/ange.19971092427
Autor:
Masaki Yanagisawa, Daiji Fukushi, Ryuji Yamabi, Masataka Watanabe, Hirohiko Kobayashi, Kenji Kotani, Takeshi Kawasaki, Yasuhiro Tosaka
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The authors have succeeded in making a robust fabrication process applied to InP-based double heterojunction bipolar transistors. The process, featuring all-wet etching method for formation of triple-mesa structure, has shown markedly high reproducib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44661e97df5a1b21179ab2bd7610216
https://doi.org/10.1109/bctm.2013.6798153
https://doi.org/10.1109/bctm.2013.6798153
Autor:
Daiji Fukushi, Tomohide Takami, Ayumi Ogawa, Hiroyuki Ozaki, Yasuhiro Mazaki, Mayumi Kasuga, Masakazu Aono, M. Uda, Takao Tsuchiya
Publikováno v:
Angewandte Chemie International Edition in English. 36:2755-2757
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9716d178c97e6d79ea70c652eb878c1d
https://doi.org/10.1002/anie.199727551
https://doi.org/10.1002/anie.199727551
Publikováno v:
Japanese Journal of Applied Physics. 33:3688
Structures created on the Si(111) substrate in the presence of Au atoms corresponding to coverages (θ; Au) of ∼0.7–1.4 monolayers (ML) are discussed on the basis of the observed scanning tunneling microscopy images. At small θ; Au's ( ∼0.7–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38e4a41cca380fb4fc8efbd428826be
https://doi.org/10.1143/jjap.33.3688
https://doi.org/10.1143/jjap.33.3688