Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Daihua Chen"'
Autor:
Jianguo Zhao, Jiangyong Pan, Bin Liu, Tao Tao, Daihua Chen, Xianjian Long, Zhe Chuan Feng, Jianhua Chang
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 1, Pp 1-7 (2021)
The optical properties of nonpolar AlGaN multiple quantum wells (MQWs) emitting at 280 nm were investigated intensively using temperature-dependent and time-resolved photoluminescence spectra associated with the characterization of structural propert
Externí odkaz:
https://doaj.org/article/1e843aae70d54a7d844b5b0f3dbd8165
Autor:
Yaohui Chen, Daihua Chen, Liufang Meng, Lingyu Wan, Huilu Yao, Junyi Zhai, Changlai Yuan, Devki N. Talwar, Zhe Chuan Feng
Publikováno v:
Royal Society Open Science, Vol 7, Iss 9 (2020)
A sol–gel method is employed for preparing high quality lead-free glass-ceramic samples (1 − x)BCZT-xBBS—incorporating Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) powder and Bi2O3-B2O3-SiO2 (BBS) glass-doped additives with different values of x (x = 0, 0.0
Externí odkaz:
https://doaj.org/article/b5baffc5d85a49bb921ae4ba79e88c1c
Autor:
Zhe Chuan Feng, Jiangyong Pan, Bin Liu, Jianguo Zhao, Daihua Chen, Xianjian Long, Jianhua Chang, Tao Tao
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 1, Pp 1-7 (2021)
The optical properties of nonpolar AlGaN multiple quantum wells (MQWs) emitting at 280 nm were investigated intensively using temperature-dependent and time-resolved photoluminescence spectra associated with the characterization of structural propert
Autor:
Chiung Yi Huang, Wenlong Niu, Daihua Chen, Devki N. Talwar, Jyh-Fu Lee, Ray-Hua Horng, Xiwen Lin, Lingyu Wan, Zhe Chuan Feng, Li Chung Cheng, Hao-Hsiung Lin
Publikováno v:
Journal of Crystal Growth. 520:89-95
A systematic investigation is reported to comprehend the atomic and crystal structure of several thin ZnGaO films grown by metal organic chemical vapor deposition method using different flow rates of diethylzinc (DEZn) while keeping triethylgallium a
Autor:
Weiguo Hu, Ian T. Ferguson, Daihua Chen, Wenhong Sun, Zhe Chuan Feng, Yuming Zhang, Lingyu Wan, Hao-Hsiung Lin, Junhua Yin, Xianjian Long, Bingjun Wang, Lei Li, Devki N. Talwar, Renxu Jia
Publikováno v:
Superlattices and Microstructures. 156:106960
A series of 3C–SiC films were grown on 4H–SiC substrates with different growth conditions using high-temperature chemical vapor deposition (HT-CVD). The influences of growth temperature (Tg) on the morphology, optical and material properties of f
Autor:
Yaohui, Chen, Daihua, Chen, Liufang, Meng, Lingyu, Wan, Huilu, Yao, Junyi, Zhai, Changlai, Yuan, Devki N, Talwar, Zhe Chuan, Feng
Publikováno v:
Royal Society Open Science
A sol–gel method is employed for preparing high quality lead-free glass-ceramic samples (1 − x)BCZT-xBBS—incorporating Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) powder and Bi2O3-B2O3-SiO2 (BBS) glass-doped additives with different values of x (x = 0, 0.0
Autor:
Devki N. Talwar, Junhua Yin, Lingyu Wan, Daihua Chen, Zhe Chuan Feng, Ian T. Ferguson, Hong Yang, Yao Liu, Tianlong He, Kaiyan He
Publikováno v:
Journal of Alloys and Compounds. 857:157487
A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor deposition) grown AlN thin films prepared on sapphire (Al2O3) and 6H–SiC substrates. Impacts of substrate on the structural, surface and optical properties of A
Publikováno v:
Journal of Alloys and Compounds. 848:156631
A series of m-plane ZnO films grown on sapphire and Si substrates with different thicknesses (186–371 nm) and different annealing temperatures (150–200 °C) were studied in detail by comparing X-ray diffraction, photoluminescence and spectroscopi
Autor:
Jianguo Zhao, Xiong Zhang, Lingyu Wan, Xianjian Long, Yao Liu, Daihua Chen, Bingjun Wang, Yi Liang
Publikováno v:
Materials Science in Semiconductor Processing. 114:105063
The electrical and optical properties of nonpolar a-plane GaN films with various silane flow rates were studied intensively utilizing temperature-dependent Hall-effect and photoluminescence measurements. The electron Hall mobility was found to change
Autor:
Xiong Zhang, Lingyu Wan, Yi Liang, Daihua Chen, Bingjun Wang, Jianguo Zhao, Yao Liu, Xianjian Long
Publikováno v:
Materials Science in Semiconductor Processing. 115:105137