Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Daichi Kakuta"'
Autor:
Takahisa Oda, Haruhiko Fukaya, Koichi Takeya, Yukio Hitotsuyanagi, Daichi Kakuta, Maho Hikita
Publikováno v:
Tetrahedron. 63:1008-1013
Four new alkaloids, sessilifoliamides E, F, G, and H were isolated from the roots of Stemona sessilifolia (Miq.) Miq., together with a known alkaloid, tuberostemonone. The structures of new alkaloids were elucidated by interpretation of the spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f53cdd3f2be87756c2163e0ab98f6749
https://doi.org/10.1016/j.tet.2006.11.020
https://doi.org/10.1016/j.tet.2006.11.020
Publikováno v:
Tetrahedron. 59:7779-7786
Four new Stemona alkaloids, sessilifoliamides A–D ( 1–4 ), were isolated from the roots of Stemona sessilifolia, along with five known alkaloids, stenine ( 5 ), 2-oxostenine ( 6 ), stemoninoamide ( 7 ), tuberostemonone ( 8 ), and neotuberostemono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::472610ed2fb3a59324a5bc0cda8c0123
https://doi.org/10.1016/s0040-4020(03)01235-3
https://doi.org/10.1016/s0040-4020(03)01235-3
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
An alternating phase shift mask technique is one of the candidates to extend the KrF excimer laser lithography generation. One of the issues for practical fabrication of Alt-PSMs is a repair of quartz bump defects. A conventional focused-ion beam (FI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b992e5b182aaf4e942537ef3ffc62f
https://doi.org/10.1117/12.458358
https://doi.org/10.1117/12.458358
Publikováno v:
SPIE Proceedings.
We have optimized a fabrication process of an alternating phase shift mask (alt-PSM) with dual trench structure. In quartz etching process using a RIE system, one of the key issues is to obtain a precise controllability of phase mean to target. In or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543f9ebf5ecb612c1fc5c4777636a2d3
https://doi.org/10.1117/12.438341
https://doi.org/10.1117/12.438341
Publikováno v:
SPIE Proceedings.
An alternating phase shift mask (Alt-PSM) technique is one of the candidates to extend the KrF excimer laser lithography generation. One of the issues for practical fabrication of Alt-PSMs is a repair of quartz bump defects. A conventional focused-io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e2f8031db4bbaaa6c1e2a3ecd971020
https://doi.org/10.1117/12.438391
https://doi.org/10.1117/12.438391
Publikováno v:
SPIE Proceedings.
We have developed a Cr-based attenuated phase shift mask process for 0.18 micrometer device generation. The fabrication process including formation of opaque patterns with an electric conductive material is introduced. With a Cr-based attenuated phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a459890a60509cc53a20ddfd7564e5
https://doi.org/10.1117/12.373387
https://doi.org/10.1117/12.373387
Publikováno v:
SPIE Proceedings.
Making attenuated phase shift masks for KrF excimer laser lithography is going to be on the mass production stage for the 0.18 micrometer critical hole and line layers. Here, key issues are phase controllability, critical dimension (CD) control on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77106c46cc002bf589756fa60349792e
https://doi.org/10.1117/12.360215
https://doi.org/10.1117/12.360215
Conference
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Conference
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