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Publikováno v: Encyclopedia of Aerospace Engineering

In order to achieve safe and successful operation of unmanned aerial systems (UAS), one must have a thorough understanding of the reliability of the system as well as the risks involved with its operation. This chapter describes a model and methodolo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d9b576b5e5efd2c244538afa4c44cb0
https://doi.org/10.1002/9780470686652.eae1148

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Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Autor: Yuta Matsumoto, Michitoshi Takeishi, Takanobu Saito, Dai Tsukada, Takashi Suemasu, Noritaka Usami, Ryo Sasaki

Publikováno v: Journal of Crystal Growth. 311:3581-3586

We have prepared (1 1 1)-oriented Si layers on SiO 2 (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::783a4028f9a30f2c507b9102d6309bbd
https://doi.org/10.1016/j.jcrysgro.2009.04.039

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Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy

Autor: Takashi Suemasu, Dai Tsukada, Yoshitake Ichikawa, Masato Sasase, Michitaka Kobayashi

Publikováno v: Journal of Crystal Growth. 310:1250-1255

We successfully demonstrated epitaxial growth of semiconductor (BaSi2)/metal(CoSi2) Schottky-barrier structures on Si(1 1 1), for the first time, by molecular beam epitaxy (MBE). The interface between the CoSi2 and BaSi2 layers was found to be sharp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da5abe3b838cbe6751ad1b892c6428bd
https://doi.org/10.1016/j.jcrysgro.2007.12.044

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Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells

Autor: Dai Tsukada, Michitoshi Takeishi, Takanobu Saito, Yuta Matsumoto, Masato Sasase, Takashi Suemasu, Ryo Sasaki, Noritaka Usami

Publikováno v: Japanese Journal of Applied Physics. 49:04DP05

We have grown BaSi2 epitaxial films and polycrystalline films by molecular-beam epitaxy on Si(111) and on (111)-oriented 100-nm-thick polycrystalline Si layers fabricated by an aluminum-induced crystallization method on SiO2, respectively. Electron b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bde0705f7341c997eec56448d804975c
https://doi.org/10.1143/jjap.49.04dp05

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Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi2Epitaxial Films Grown by Molecular Beam Epitaxy

Autor: Michitoshi Takeishi, Takashi Suemasu, Dai Tsukada, Yuta Matsumoto, Teruhisa Ootsuka, Takanobu Saito, Ryo Sasaki

Publikováno v: Japanese Journal of Applied Physics. 48:106507

Approximately 250-nm-thick undoped n-type BaSi2 epitaxial films were grown on n-Si(111) substrates by molecular beam epitaxy, and 1-mm-diameter mesa-isolated n-BaSi2/n-Si diode structures were successfully produced by wet chemical etching. Etching of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27376e0cf35f1532001117ed1b02b092
https://doi.org/10.1143/jjap.48.106507

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