Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Dai Guo-Cai"'
Publikováno v:
Solid State Communications. 78:137-140
A new amorphous semiconductor superlattice, the a-Si : H/a-SiY : H (Y : Yttrium) has been prepared, and the experimental results of its quantum size, PPC and S-W effects are reported in this paper. A new unified explanation is given of both the PPC a
Publikováno v:
Journal of Non-Crystalline Solids. :103-106
The electronic energies were calculated for a model of hydrogen-related complex defects in a-Si:H, which has Td symmetry, being a hybride quartet. Using the complete neglect of differential overlap CNDO method, we find the probability of the formatio
Publikováno v:
Philosophical Magazine Letters. 56:265-269
Based on experimental results of transient photoresponse and photo-induced reversible echanges for the same a-Si : H pin structure, a model is proposed for the Staebler–Wronski effect, by which reversible changes of the photo-induced dangling-bond
Publikováno v:
Solar Cells. 26:159-164
Based on analysis of the experimental results of photoinduced changes and of transient photoresponse, a new mechanism for light-induced changes in a-Si:H p-i-n solar cells is suggested. This mechanism takes into account both the reversible changes of
Publikováno v:
MRS Proceedings. 70
The turn-off character in a-Si:H solar cells has been studied by rectangular monochromatic light pulses. It is found that the turn-off time increases obviously with the decrease of the excitation light wavelengths when the turn-off steady photovoltag
Publikováno v:
MRS Proceedings. 70
AbstrctTime-dependent photocurrent response by the monochromatic square-pulsed excitation light of different wavelenths has been studied on the PIN a-Si:H solar cells. The experiments show that the shape of the photocurrent transient is distinctly ch
Publikováno v:
Acta Physica Sinica. 35:709
The electronic energies of hydrogenated silicon vacancy which has Td symmetry are calculated. Using the method of completely neglecting of differential overlap (CNDO), we find the probability of the formation of the hydride quartet, and the effect of
Publikováno v:
Acta Physica Sinica. 37:481
The high conductivity a-Si:H:Y alloy films prepared by rf sputtering have been obtained. The room temperature d.c. conductivity is about 2×101 Ω-1·cm-1 as Y doping concentration reaches 20 at %. Measurements showed that the alloy films are of n-ty
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Akademický článek
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