Zobrazeno 1 - 10
of 1 698
pro vyhledávání: '"Dahlstrom, M."'
Publikováno v:
SAE Transactions, 2000 Jan 01. 109, 2875-2885.
Externí odkaz:
https://www.jstor.org/stable/44746077
Autor:
R. H. Thurston
Publikováno v:
Science. 5:773-773
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1113085fbd0e97c205b3178bcc74076d
https://doi.org/10.1126/science.5.124.773.a
https://doi.org/10.1126/science.5.124.773.a
Publikováno v:
In Solid State Electronics 2002 46(10):1541-1544
Publikováno v:
Molecular Psychiatry. 2000, Vol. 5 Issue 5, p514. 9p.
Publikováno v:
SAE Transactions, 1987 Jan 01. 96, 749-760.
Externí odkaz:
https://www.jstor.org/stable/44469182
Autor:
Chow, Elaine Hoi Yee1 elainechow@twc.edu.hk, Tiwari, Agnes2
Publikováno v:
International Journal of Qualitative Studies on Health & Well-Being. Dec2024, Vol. 19 Issue 1, p1-10. 10p.
Autor:
Redding LE; School of Veterinary Medicine, University of Pennsylvania Kennett Square, PA, United States., Brooks C; Department of Psychology and Family Studies, Mississippi University for Women, Columbus, MS, United States., Georgakakos CB; Biological and Environmental Engineering, Cornell University, Ithaca, NY, United States., Habing G; Department of Veterinary Preventive Medicine, The Ohio State University, Columbus, OH, United States., Rosenkrantz L; Department of Geography, Simon Fraser University, Burnaby, BC, Canada., Dahlstrom M; Greenlee School of Journalism and Communication, Iowa State University, Ames, IA, United States., Plummer PJ; Veterinary Diagnostic and Production Animal Medicine, Iowa State University, Ames, IA, United States.; National Institute of Antimicrobial Resistance Research and Education, Ames, IA, United States.
Publikováno v:
Frontiers in veterinary science [Front Vet Sci] 2020 May 28; Vol. 7, pp. 297. Date of Electronic Publication: 2020 May 28 (Print Publication: 2020).
Autor:
Griffith, Zach, Dahlstrom, M, Rodwell, MJW, Fang, X M, Lubyshev, D, Wu, Y, Fastenau, J M, Liu, W K
Publikováno v:
Griffith, Zach; Dahlstrom, M; Rodwell, MJW; Fang, X M; Lubyshev, D; Wu, Y; et al.(2005). InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f(T) and 505-GHz f max. IEEE Electron Device Letters, 26(1), 11-13. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/3jb3n053
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 391-GHz f(t), and 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::9efefd25cf3feb7914682bacfa470741
http://www.escholarship.org/uc/item/3jb3n053
http://www.escholarship.org/uc/item/3jb3n053
Publikováno v:
Griffith, Zach; Kim, Y; Dahlstrom, M; Ard, ACG; & Rodwell, MJW. (2004). InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and f(T), f(max) > 268 GHz. IEEE Electron Device Letters, 25(10), 675-677. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/9h51m95m
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP--employed because of its high thermal conductivity to mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::ad80f3f63448fbde5f65fe72a28ff78b
http://www.escholarship.org/uc/item/9h51m95m
http://www.escholarship.org/uc/item/9h51m95m