Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions

Autor: Jhen-Yong Hong, Chen-Feng Hung, Kui-Hon Ou Yang, Kuan-Chia Chiu, Dah-Chin Ling, Wen-Chung Chiang, Minn-Tsong Lin

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)

Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance s

Externí odkaz: https://doaj.org/article/6af67625cc3e49e598e058b88d433a81

Low-frequency 1/f noise characteristics of ultra-thin AlOx-based resistive switching memory devices with magneto-resistive responses

Autor: Isidoro Martinez, Farkhad G. Aliev, Chun-Yen Chen, Dah-Chin Ling, César González-Ruano, Jhen-Yong Hong

Publikováno v: DDFV. Repositorio Institucional de la Universidad Francisco de Vitoria
instname
Biblos-e Archivo. Repositorio Institucional de la UAM
Electronics
Volume 10
Issue 20
Electronics, Vol 10, Iss 2525, p 2525 (2021)

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f noise power spectral density

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50405d4665cbef24de656a5dcb94344d
https://hdl.handle.net/10486/701487

Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots

Autor: R.-B. Chen, Der-Jun Jang, F.-C. Chuang, Dah-Chin Ling, Antaryami Mohanta, Shu Kai Lu, J. S. Wang

Publikováno v: Journal of Luminescence. 195:109-115

Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL) spectroscopy. The energy spacing betw

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b2cd10023fe2f6ff16115140bb599de6
https://doi.org/10.1016/j.jlumin.2017.11.009

Controlled Low-Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

Autor: Yi-Hsien Lee, Dah Chin Ling, Yung-Fu Chen, Atiye Pezeshki, Po Han Chen, Meng Hsi Chuang, Yen Po Liu, Ji Wun Wang, Jeng-Chung Chen

Publikováno v: Advanced Electronic Materials. 4:1700340

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9fa3f37bc8c5e11fec542f4a3a615892
https://doi.org/10.1002/aelm.201700340

The modulated structure and ferromagnetic insulating state in a nine-layer BaRuO(3)

Autor: Chang Hung Yao, Hsiang Lin Liu, Chao-Hung Du, Mau Tsu Tang, Dah Chin Ling, Naoshi Ikeda, Peter D. Hatton, Fon C. Hsu

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 22(3)

We report the observation of a modulated structure and a ferromagnetic insulating state in a high quality single crystal of a nine-layer BaRuO3. Using x-ray scattering, the modulated satellites were observed to double the unit cell along the c-axis a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969ff5a2816ca92bc5d35e9a1d61bf5e
https://pubmed.ncbi.nlm.nih.gov/21386301