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Autor:
Dagault, Léa
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Paul Sabatier-Toulouse III, 2021. English. ⟨NNT : 2021TOU30139⟩
Nanosecond Laser Annealing is a promising method for dopant activation in thin junctions, enabling activation levels above the solid solubility limits in Si and Ge. Due to its short pulse duration, only the surface of the irradiated material is heate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f0e1a6aa678e2c94ff8466d4c3350db1
https://theses.hal.science/tel-03637329
https://theses.hal.science/tel-03637329
Autor:
Dagault, Léa
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Toulouse 3 Paul Sabatier, 2021. English
National audience; Nanosecond Laser Annealing is a promising method for dopant activation in thin junctions, enabling activation levels above the solid solubility limits in Si and Ge. Due to its short pulse duration, only the surface of the irradiate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0d53d856c6da8bcab8be60a2d837f76b
https://hal.laas.fr/tel-03356506
https://hal.laas.fr/tel-03356506