Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Daewoong Kang"'
Publikováno v:
IEEE Access, Vol 12, Pp 45112-45117 (2024)
We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the $\Delta \text{V}_{\mathrm {th}}$ of each structure by doping type is compared
Externí odkaz:
https://doaj.org/article/bf58a11d9fb94917ab3a6ba585a41ee2
Publikováno v:
IEEE Access, Vol 12, Pp 15050-15055 (2024)
As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This latera
Externí odkaz:
https://doaj.org/article/6f613eab578547038357eb8d0d83695c
Publikováno v:
IEEE Access, Vol 11, Pp 113704-113711 (2023)
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a metho
Externí odkaz:
https://doaj.org/article/da25561f7850480ea2c4045e65a0b84d
Publikováno v:
IEEE Access, Vol 10, Pp 108067-108074 (2022)
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this study, we defined the curvature of the channel as a ‘Wave Factor (WF
Externí odkaz:
https://doaj.org/article/4cbebd8df19c49149bcb732a8087ba1f
Autor:
Inhyeok Kim, Yonjae Kim, Daewoong Kang, Junyang Jung, Sungsoo Kim, Hwasung Rim, Sanghoon Kim, Seung-Geun Yeo
Publikováno v:
Biomedicines, Vol 9, Iss 11, p 1575 (2021)
Neuropeptides and neurotransmitters act as intermediaries to transmit impulses from one neuron to another via a synapse. These neuropeptides are also related to nerve degeneration and regeneration during nerve damage. Although there are various neuro
Externí odkaz:
https://doaj.org/article/866071f082ba49cab8e18e7f4ee55fed
Publikováno v:
Japanese Journal of Applied Physics. 62:024001
In this paper, variation in the parameters of the select transistor of a vertical-NAND (V-NAND) flash memory device is investigated for device optimization and performance evaluation. Device characteristics including threshold voltage (V TH), subthre
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1021
In vertical-NAND (V-NAND) flash memory, the effect of current path change according to the program state was analyzed. A new memory structure in which a heavily doped polysilicon layer is added around a typical V-NAND channel was proposed, and electr
Publikováno v:
Journal of the Korean Society for Railway. 22:604-616
Publikováno v:
Annals of Oncology. 30:v246
Background Many studies have suggested that dietary calcium has a protective effect on colon cancer development. The mean dietary calcium intake of Koreans is 490 mg/day, which is far less than the recommended intake of calcium 700-800mg/day. In this
Autor:
Hyungcheol Shin, Daewoong Kang
Publikováno v:
Solid-State Electronics. 54:1263-1268
Recently the cell integration density of NAND flash memory is increasing rapidly due to its simple structure, which is suitable for high resolution lithography. Therefore, the reduction of cell size has become the most important issue. However, with