Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Daejin Eom"'
Autor:
Wonho Song, Jung‐Yong Lee, Junhyung Kim, Jinyoung Park, Jaehyeong Jo, Eunseok Hyun, Jiwan Kim, Hyunjae Park, Daejin Eom, Gahyun Choi, Kibog Park
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The effective work‐function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, it is demonstrated experimentally that the effective work‐function of the
Externí odkaz:
https://doaj.org/article/67624500d80f49129fc2badd79b237b5
Autor:
Seungwoo Song, Hu Young Jeong, Kibum Kang, Han Beom Jeong, In-Young Jung, Jung-Hoon Lee, Ansoon Kim, Jeongtae Kim, Jong Min Yuk, Daejin Eom, Junghoon Jahng, Eun Seong Lee, Seorin Cho, Seong Rae Cho, Hoseok Heo, Seungwook Choi, Min-kyung Jo
Publikováno v:
ACS Nano. 15:18113-18124
Charge doping to Mott insulators is critical to realize high-temperature superconductivity, quantum spin liquid state, and Majorana fermion, which would contribute to quantum computation. Mott insulators also have a great potential for optoelectronic
Autor:
Daejin Eom, Ja-Yong Koo
Publikováno v:
Nanoscale. 12:19604-19608
Kekulé distortion in graphene is a subject of extensive theoretical studies due to its non-trivial material properties. Yet, experimental observation of its formation mechanism and electronic structures is still elusive. Here, we used scanning tunne
Autor:
Min-Kyung, Jo, Hoseok, Heo, Jung-Hoon, Lee, Seungwook, Choi, Ansoon, Kim, Han Beom, Jeong, Hu Young, Jeong, Jong Min, Yuk, Daejin, Eom, Junghoon, Jahng, Eun Seong, Lee, In-Young, Jung, Seong Rae, Cho, Jeongtae, Kim, Seorin, Cho, Kibum, Kang, Seungwoo, Song
Publikováno v:
ACS nano. 15(11)
Charge doping to Mott insulators is critical to realize high-temperature superconductivity, quantum spin liquid state, and Majorana fermion, which would contribute to quantum computation. Mott insulators also have a great potential for optoelectronic
Autor:
Daejin Eom, Ja-Yong Koo
Publikováno v:
Physical review letters. 127(25)
We generate paramagnetic centers on a heavily boron-doped Si(111) surface by using a scanning tunneling microscope and show that they mediate the spin-dependent recombination of the bound holes of the boron acceptor via direct visualization. This rec
Publikováno v:
Journal of the Korean Physical Society. 72:577-581
We perform first-principles calculation to investigate the possible magnetism on the Si(111)- $$\sqrt 3 \times \sqrt 3 $$ surface, which is stabilized for highly boron-doped samples. When the silicon adatom on top of a boron atom is removed to form a
Publikováno v:
Surface Science. 656:33-38
Adsorption of CO molecules on Si(111)-(7×7) is investigated by using scanning tunneling microscopy (STM) and density-functional theory calculations. The most reactive site on the Si(111)-(7×7) surface is the corner adatom in the faulted half unit (
Publikováno v:
Physical Review B. 100
The (001) surface of heavily boron (B) doped silicon is investigated by employing the scanning tunneling microscopy measurements and the density functional theory calculations. Two different defect structures are found in the surface layers, both of
Autor:
Min-kyung Jo, Hoseok Heo, Jung-Hoon Lee, Seungwook Choi, Ansoon Kim, Han Beom Jeong, Hu Young Jeong, Jong Min Yuk, Daejin Eom, Junghoon Jahng, Eun Seong Lee, In-young Jung, Seong Rae Cho, Jeongtae Kim, Seorin Cho, Kibum Kang, Seungwoo Song
Publikováno v:
ACS Nano; 11/23/2021, Vol. 15 Issue 11, p18113-18124, 12p
Publikováno v:
Surface Science. 696:121589
Incorporation of carbon (C) atoms in the Si(111)-(7 × 7) surface is investigated by using scanning tunneling microscopy and density-functional theory calculations. C atoms are supplied through thermal dissociation of CO molecules adsorbed on the Si(